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Power Modules - Silicon, IGBT and Silicon Carbide (SiC)

As subsystem designs get more complicated and board space becomes more valuable, many designers are considering using power modules instead of traditional discrete DC-DC Point-of-Load (POL) designs to reduce board size, improve reliability and speed up time to market.

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Microchip’s highly integrated power modules contain a controller, power switches and the necessary passive components—all of which are fully tested and pre-characterized for EMI and DC performance—to offer a complete switching power supply solution. Offered in an ultra-compact, rugged and thermally enhanced package to improve high power density in your designs, these modules simplify your power design process while offering exceptional performance. Utilizing our proprietary Hyper Speed Control® architecture, they are designed to offer fast load transients to minimize output capacitance. Their HyperLight Load® mode provides efficiency improvements for light-load operation.

How Can a Power Module Solve Your Design Challenges?

  • Save board space and reduce PCB complexity
  • Thermal performance delivered in a small package
  • Pre-characterized EMI and DC Performance

Ease of Use

  • Turnkey solution speeds your time to market
  • Integrated controller, inductor and MOSFETs for simplified design
  • Optimized pinout for easy layout and assembly

Exceptional Performance

  • Up to 93% power conversion efficiency
  • Low radiated emissions (EMI)
  • Hyper Speed Control architecture enables fast load transient response
  • HyperLight Load mode improves light-load efficiency

Small Form Factor

  • Small QFN package reduces solution size
  • Uses up to 60% less board space versus discrete designs
  • Low height profile (down to 0.9 mm)

Robust

  • Rugged package design for thermal performance, vibration and humidity resistance
  • Fewer external components improve reliability
  • Fully specified from -40°C to +125°C
Design Versatility
+
  • Microchip’s power module portfolio covers input voltages ranging from 2.7V to 70V and current levels that range from 400 ma to 14A
  • They include integrated inductors and passive components targeted to automotive, industrial and server/computing applications
  • Special packaging techniques offer enhanced EMI/EMC performance over other industry solutions
The Microchip Difference
+

Reducing Thermal Resistivity While Maintaining a Low Profile

Many industry solutions use die-in-PCB or die-over-PCB approaches. While these solutions make it easy to densely integrate the passive components, the plastics themselves are thermally resistive. Their poor thermal capabilities essentially negate their size advantage. The maximum operating temperature suffers and current capabilities get substantially de-rated over operating temperature. As a result, designers will require a larger, higher-current power module to meet the same application needs.

Microchip’s modules have superior thermal performance because they are built around thermally conductive copper lead frames instead of Printed Circuit Boards (PCBs). This allows operation up to the full-rated current, even at elevated temperatures, making the system more robust and more competitive in terms of both cost and size. The ultra-low profile combined with superior thermal performance enables the module to be placed under the PCB or on backplanes to save precious board space.


Power Modules - Vin from 2.7V to 70V

VIN = 2.7V to 5.5VVIN = 4.5V to 26VVIN = 4.5V to 50VVIN = 4.5V to 70V
MIC38300
3A Heldo® Family
(4 × 6 × 0.9)
MIC45212
14A
(12 × 12× 4) 
MIC28303
3A
(12 × 12 × 3)
MIC28304
3A
(12 × 12 × 3) 
MIC38150
1.5A Heldo Family
(4 × 6 × 0.9)
MIC45208
10A
(10 × 10 × 4)
  
MIC33153
1.2A
(3 × 3 × 1.1)
MIC45205
6A
(8 × 8 × 3)
  
600 mA
MIC33050 (3 × 3 × 0.9)
MIC3385 (3 × 3.5 × 0.9)
MIC45116
6A
(8 × 8 × 3)
  
400 mA
MIC33030 (2.5 × 2 × 1.1)
5A
MIC45404 (10 × 6 × 2)
  


Silicon, IGBT, and Silicon Carbide (SiC) Power Modules – Voltages from 100V to 1700V

Vces/Vdss/Vr > 100V
 IGBT/MOSFET/Diode Power Modules
Vdss > 600V
SiC Power Modules
IGBT Power Modules
600V to 1700V, 20A to 750A

Three-level T-Type & NPC SiC MOSFET
600V to 1200V, 20A to 160A

MOSFET Power Modules
100V to 1200V, 6A to 540A

Phase Leg SiC MOSFET
1200V to 1700V, 40A to 200A

SiC Diode Modules
200V to 1700V, 30A to 500A

Triple Phase Leg SiC MOSFET
1200V, 55A to 150A

Very Low Inductance Package
1200V to 1700V, 207A to 586A

 

Dual SiC Diode
600V to 1200V, 20A to 60A

Full Bridge SiC Diode
600V to 1200V, 10A to 40A

  

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