Silicon Carbide (SiC) semiconductors are innovative, new options for improving system efficiency, supporting higher operating temperatures and reducing costs in your power electronic designs. They can be used in broad range of high-voltage, high-power applications in industrial, automotive, medical, aerospace, defense, and communication market segments. Our next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high-repetitive Unclamped Inductive Switching (UIS) capability and excellent gate oxide shielding and channel integrity for robust operation. Our SiC MOSFET and SiC SBD die can be paired for use in power modules with various topologies.
The MSCSICPFC/REF5 is a Vienna 3-Phase PFC Reference Design for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) charger and high-power switch mode power supply applications. This reference design achieves 98.6% efficiency at 30 kW output power.
You can use a Piecewise-Linear Electrical Circuit Simulation (PLECS) tool before hardware design to simulate the dynamic behavior of a complex Vienna PFC circuit that uses ideal switches with optional dsPIC33CH Processor-in-the-Loop (PIL). Click on the “Explore Product” link to go to the reference design page, where you can complete a form to register to download the PFC design files or PLECS simulation model for the Vienna 3-Phase Reference Design.
Uses a SIMetrix/SIMPLIS environment to model circuit behavior, reducing design time with software debugging for initial design verification.
Provides advice on your exact physical circuit layout, sharing best practices from an experienced power supply designer, so that physical hardware will match simulations.