We detect you are using an unsupported browser. For the best experience, please visit the site using Chrome, Firefox, Safari, or Edge. X

SuperFlash® technology is an innovative and versatile type of NOR Flash memory that utilizes a proprietary split-gate cell architecture to provide superior performance, data retention and reliability over conventional stacked gate Flash. Watch our SuperFlash Flash Memory Technology Advantages webinar to learn how the SuperFlash cell operates differently from a conventional Flash cell.

SuperFlash® Flash Memory Technology Advantages Webinar

Using a transistor-level memory cell description, this video explains the technical details behind SuperFlash memory's advantages over conventional NOR Flash memory. Better endurance, lower cell power, and 1000x better erase times are justified by comparing how the Flash and SuperFlash memory cells function differently. 

Industry's Fastest Erase Times

The unique split-gate cell design allows products with SuperFlash technology to provide the fastest sector, block and chip erase times available. While a typical 64 Mb Flash can take as long as 100 seconds to perform a full chip erase, the equivalent products with SuperFlash technology can complete the same operation in less than 100 ms.

As shown in Figure1, chip erase times become more significant as the density increases in competing devices. With SuperFlash technology, the chip erase remains extremely fast regardless of density.

Over-erase is a condition that affects traditional stacked gate Flash. An over-erased cell creates a leakage current path between the drain and floating gate, which can result in read failures. To combat this effect, stacked gate Flash requires multiple erase pulses, soft-programming and erase verification cycles to ensure a tight threshold voltage window of the Flash cell. Over-erase and the resulting cell leakage does not affect the split gate cell design of SuperFlash technology because the floating gate is isolated from the drain. Therefore, the additional soft-program and erase verify steps during cell erase are not required with SuperFlash technology. The result is a Flash memory that can perform a full chip erase up to 1,000 times faster than typical Flash.

Faster Erase Times Save You Money

Your factories may be wasting valuable time testing Flash memory. SuperFlash memory drastically improves manufacturing throughput, saving test costs and avoiding the investment in additional test equipment to meet your customers’ demand. Stacked gate Flash requires minutes per board whereas SuperFlash only needs seconds. Don’t get caught off guard by this hidden product cost.

We have created an interactive savings calculator to show you what your annual savings might be if you choose SuperFlash technology. Give it a try.

High Reliability and Data Retention


SuperFlash technology utilizes a much thicker oxide layer than traditional stacked-gate Flash. The thicker oxide layer is much less susceptible to defects and damage that can create a leakage path and eventual cell data loss. Notice that the floating gate of the SuperFlash technology cell also has a hook or notch at the edge. This hook creates a strong electric field that improves the performance and reliability of erase operations.

Products


Serial NOR Flash Memory (SPI, Quad SPI/QSPI) Products by Density

Parallel NOR Flash Memory Products by Density

Ready to Use SuperFlash Technology?


Now that you know about how using SuperFlash Technology can save both time and money, find the right SuperFlash memory device for your application. We provide key design considerations to make product selection easy.

Development Tools


Serial SuperFlash® Kit 2

Part Number: AC243008

The Serial SuperFlash Kit 2 contains three serial Flash daughter boards that are designed to interface with the mikroBUS™ connector on the Explorer 16/32 Develoment Board.

SQI SuperFlash Kit 1

Part Number: AC243009

The SQI SuperFlash Kit 1 contains three serial Flash daughter boards that are designed to interface with the mikroBUS connector on the Explorer 16/32 Develoment Board.

Parallel SuperFlash Kit 1

Part Number: AC243006-1

This evaluation kit contains two parallel Flash PICtail™ Plus Daughter Boards that are designed to interface with the PICtail Plus connector on the Explorer 16 Development Board.

Documentation


Title Download
Memory Products Brochure Download
SuperFlash Memory Products Download

Memory Product Comparison


  Serial
EEPROM
Parallel
EEPROM
OTP
EPROM
Serial
Flash
Parallel
Flash
Serial
SRAM
Serial
NVSRAM
Serial
EERAM
  Explore Products Explore Products Explore Products Explore Products Explore Products Explore Products  Explore Products Explore Products
Density 128 bit - 4 Mb 64 Kb - 1 Mb 256 Kb - 8 Mb 512 Kb - 64 Mb 1 - 64 Mb 64 Kb - 1 Mb 512 Kb - 1 Mb 4 Kb - 1 Mb
Clock Frequency 0.4 - 20 MHz 70 ns 45 ns 20 - 104 MHz 55-70 ns 16 - 20 MHz 16 - 20 MHz 1 - 66 MHz
Cost/Bit High High High Low Low Medium Medium Medium
Read Times Medium Fast Fast Medium Fast Medium Medium Medium
Write Times Medium Fast N/A Medium Fast Instantaneous Instantaneous Instantaneous
Pin Count 2 to 8 pins 28 and 32 pins 28 to 44 pins 8 pins 32 and 48 pins 8 pins 8 pins 8 pins
Data Retention 200+ Years 10 Years 10 Years 100+ Years 100+ Years Volatile 20+ Years
(with battery)
100+ Years
Typ. Standby Current 1 µA 200 µA 100 µA ~15 µA ~30 µA ~4 µA ~4 µA ~40 µA
Voltage 1.7 V - 5.5V 2.7V,
5V
2.7V,
5V
1.65V - 1.95V,
2.7V - 3.6V,
2.3V - 3.6V
1.65V - 1.95V,
2.7V - 3.6V,
4.5V - 5.5V
1.65V - 1.95V,
2.5V - 5.5V
2.5V - 5.5V 2.7V - 3.6V,
4.5V - 5.5V
Temperature -55°C to +150°C 1 -55°C to +125°C -40°C to +85°C -40°C to +125°C 1 -40°C to +85°C -40°C to +125°C -40°C to +85°C -40°C to +125°C 1

1. Selected densities