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Broad and Flexible Portfolio of Silicon Carbide (SiC) Discretes
Lower System Cost
- Device redundancy is not required
- Ability to focus on the next generation of products instead of redesigning
- No supply interruption of production
Faster to Market
- Minimize system development time
- Provide earlier and more revenue
- Accelerate your innovation process
Lower Risk
- Higher reliability and system lifetime
- Lower component count
- Multiple epi sources and fabs
Highlights
Our mSiC MOSFETs offer unparalleled advantages, including significantly higher output switching frequency and current capability than silicon devices. Their lower RDS(on) and improved thermal performance enable excellent efficiency and high power density with improved system reliability and reduced cooling requirements, resulting in a smaller system size, reduced weight, and cost. mSiC MOSFETs have an unmatched Unclamped Inductive Switching (UIS) avalanche rating and gate oxide stability, ensuring rugged and reliable operation at high switching frequencies.
Our mSiC diodes provide superior reliability and increased efficiency in high-voltage applications. These highly reliable SBDs offer exceptional repetitive UIS capability without any degradation. They also feature balanced surge current, forward voltage and thermal resistance, allowing for lower switching loss and more efficient power systems.
Features
- High-temperature operation (Tj = 175°C) with low RDS(on) shift over full temperature range
- Industry-leading gate oxide stability (< 100 mV Vth shift) and gate oxide lifetime
- Avalanche (UIS) ruggedness (> 100k pulses)
- Long short-circuit withstand time
- High reverse current capability
Benefits
- Higher switching frequency and efficiency
- Higher power density
- Improved ruggedness
- Smaller and lighter systems without requiring SiC device redundancy
- Reduced cooling requirements
- Lower system cost
Our Advantage
- Multiple epi sources and dual SiC fabs ensure long-term supply
- Unmatched UIS avalanche rating
- Longest gate oxide withstand time
- Client-driven obsolescence practice
Explore Our Products
Discrete SiC MOSFETs
Our SiC MOSFETs feature best-in-class avalanche ruggedness, short circuit capability and oxide lifetime.
Discrete SiC Diodes
Our SiC Schottky Barrier Diodes (SBDs) offer a wide range of solutions.
- Discrete mSiC MOSFETs
- Discrete mSiC Diodes
Similar Devices
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Similar Devices
mSiC Technology
mSiC products utilize Silicon Carbide (SiC), a wide bandgap semiconductor material that possesses higher breakdown voltage and thermal conductivity than silicon. Our mSiC products can operate at higher voltages and temperatures without requiring complex cooling systems, making them a cost-effective and energy-efficient solution. They are engineered to lower switching losses, resulting in less heat generated during operation and improving overall efficiency. The technology used in mSiC products improves performance, reduces heat generation and increases energy efficiency in high-voltage power systems.
SiC Design Resources
Accelerate your SiC development journey with our industry-leading hardware and software tools, models, simulations and extensive documentation supporting our mSiC products. Explore our comprehensive selection of time-saving SiC reference designs, development tools and resources.
Need Support?
Are you considering a transition to SiC or do you want more out of your SiC-based design that is already in production?
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