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mSiC diodes are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at a low reverse current. Along with reduced switching loss, our SBDs reach a much higher breakdown voltage than silicon and exhibit high repetitive Unclamped Inductive Switching (UIS) capability without degradation.
Our mSiC Schottky Barrier Diodes (SBDs) increase efficiency and add superior reliability in high-voltage applications. SiC diodes exhibit higher breakdown voltage with a lower forward voltage drop and a significantly shorter reverse recover time. mSiC SBDs are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss, enabling more efficient power systems.
Accelerate your development journey with our industry-leading hardware and software tools, models, simulations and extensive documentation supporting mSiC products.
Explore our comprehensive selection of time-saving SiC reference designs and development tools.
Accurate simulation tools for designing, analyzing and optimizing SiC power devices and systems to predict performance, evaluate thermal behavior and streamline development before hardware testing.
Evaluate device performance quickly by calculating power losses and thermal performance under different conditions for mSiC solutions using lab testing data for common power converter topologies.
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