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Silicon Carbide mSiC™ Schottky Barrier Diodes

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High-Efficiency Discrete Silicon Carbide Schottky Barrier Diode Solutions


mSiC™ Schottky Barrier Diodes (SBDs) leverage silicon carbide wide bandgap (WBG) technology to offer unrivaled ruggedness and performance. Our mSiC diodes range from 700V to 3.3 kV in a variety of topologies to give you flexible options for increasing the power density and reliability in your system design. mSiC diodes enable you to create high-voltage power applications with a smaller footprint, lower weight and reduced cost.

Why Choose Our mSiC Diode Solutions?


mSiC diodes are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at a low reverse current. Along with reduced switching loss, our SBDs reach a much higher breakdown voltage than silicon and exhibit high repetitive Unclamped Inductive Switching (UIS) capability without degradation.

Design Resources        


SiC Documentation

SiC Design Resources

Accelerate your development journey with our industry-leading hardware and software tools, models, simulations and extensive documentation supporting mSiC products.

SiC Reference Designs

Reference Designs and Development Tools

Explore our comprehensive selection of time-saving SiC reference designs and development tools.

SiC Models and Simulation

SPICE and PLECS Models

Accurate simulation tools for designing, analyzing and optimizing SiC power devices and systems to predict performance, evaluate thermal behavior and streamline development before hardware testing.

MPLAB® SiC Power Simulator

MPLAB® SiC Power Simulator

Evaluate device performance quickly by calculating power losses and thermal performance under different conditions for mSiC solutions using lab testing data for common power converter topologies.

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