High-Linearity, High-Efficiency and Low-Noise RF Silicon and GaN-Based Power Electronic Devices
Explore our extensive portfolio of RF Silicon (Si) and Gallium Arsenide (GaAs) diodes for cost-effective solutions to meet your design’s requirements. Our solutions include PIN diodes and limiter diodes, tuning and multiplier varactors, noise diodes, Schottky barrier diodes, Metal-Nitride-Silicon (MNS) chip capacitors and Gunn diodes. We offer devices in a wide array of package types that can support frequencies from 100 Hz through millimeter wave. These low-noise, high-efficiency linear diodes deliver the quality and reliability that your design requires.
Silicon and GaAs Diodes
PIN Diodes
Designed for low-frequency and low-intermodulation switching performance, our portfolio ranges from a culmination of different PIN diodes such as:
We offer several varieties of diodes optimized for MRI systems. Typically used in receiver protection circuits or receiver arrays, these non-magnetic devices are available in three packages:
Available in a variety of package styles as well as die, our abrupt and hyper abrupt Si and GaAs varactor diodes offer large tuning ratios and high Q value at high frequency. We also offer:
We provide Si and GaAs Schottky diodes in flip chip, surface-mount and standard package types. These devices are commonly used in applications such as:
Our Gunn diodes feature ultra-low phase noise and 1/f noise and are available in frequencies through the Ku band. They are frequently used in high-reliability, ultra-low phase noise systems such as:
Silicon diodes have good thermal stability and can operate at higher temperatures than some other semiconductor materials.
Low Cost
Silicon is abundant and the manufacturing process is well established, making silicon diodes generally less expensive than those made from other materials like GaAs.
Robustness
Silicon diodes are known for their robustness and reliability, which makes them suitable for a wide range of applications.
Low Noise
Silicon diodes can exhibit low noise characteristics, which is beneficial in RF applications where signal integrity is critical.
Advantages of RF GaAs Diodes
High Electron Mobility
GaAs has higher electron mobility than silicon, which allows for faster switching speeds and higher frequency operation. This makes GaAs diodes suitable for very high-frequency applications, such as microwave and millimeter-wave technologies.
Low Loss
GaAs diodes typically have lower parasitic resistances and capacitances, resulting in lower signal loss at high frequencies.
Temperature Performance
GaAs diodes can perform well at both low and high temperatures, which is advantageous for military and space applications where extreme temperature conditions are common.
Key Applications
Military and Space
Our RF diodes can be hermetically sealed to meet the most stringent military or space requirements and can be combined to include several functions in a single high-reliability package.
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