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Silicon Carbide mSiC™ MOSFETs
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High-Performance Discrete Silicon Carbide (SiC) Power MOSFET Solutions
Which mSiC MOSFET Family is Right for Your Project?
Our mSiC MOSFET portfolio is organized into three product families to meet diverse application requirements. Our comprehensive mSiC portfolio, with voltages spanning 700V to 3.3 kV, supports compact, efficient designs and is backed by our robust system solutions and a stable supply chain, with proven performance across aerospace, e-Mobility, industrial and renewable energy applications.
Why Choose Our mSiC MOSFET Solutions?
There are multiple advantages of utilizing mSiC devices over traditional silicon devices. mSiC MOSFETs enable higher voltage and current capabilities while also greatly improving efficiency. This leads to a smaller system with a higher power density. mSiC MOSFETs also feature unparalleled Unclamped Inductive Switching (UIS) avalanche ratings and gate oxide stability that make them a reliable and rugged solution you can trust.
Features
- High temperature operation (Tj = 175°C) with low RDS(on) shift over full temperature range
- Industry-leading gate oxide stability (< 100 mV Vth shift) and gate oxide lifetime
- Avalanche (UIS) ruggedness (> 100k pulses)
- Long short-circuit withstand time
Benefits
- Higher switching frequency and efficiency
- Higher power density
- Improved ruggedness
- Smaller and lighter systems without requiring SiC device redundancy
- Improved cooling requirements that reduce system cost
Our Advantage
- Multiple epi sources and dual SiC fabs ensure long-term supply
- Unmatched UIS avalanche rating
- Longest gate oxide withstand time
- Client-driven obsolescence practice
mSiC MOSFET Technology
Our mSiC MOSFETs offer exceptional flexibility and performance to deliver increased efficiency and reliability in high-voltage applications. mSiC MOSFET technology represents a major advancement in power electronics, enabling the design of more efficient, compact and reliable systems.
Demo & Evaluation Boards
The EV84K75A Single-Channel Discrete Gate Driver Evaluation Board is a development platform designed to evaluate and demonstrate the performance of a single-channel gate driver for controlling power transistors in various switching applications.
The EV40T43A Half Bridge Evaluation Board provides a ready-to-use platform for testing and evaluating half-bridge power circuit designs, simplifying development by enabling quick prototyping and performance assessment of power switching applications.
The Power Motherboard (PMB) Fast Evaluation Tool (FET) is designed to provide an easy, versatile and efficient SiC MOSFET testing platform to evaluate conduction and switching losses, perform Double Pulse Testing (DPT), and analyze Buck and Boost converter performance.
Resources
SiC Design Resources
Accelerate your development journey with our industry-leading hardware and software tools, models, simulations and extensive documentation supporting mSiC products.
Reference Designs and Development Tools
Explore our comprehensive selection of time-saving SiC reference designs and development tools.
SPICE and PLECS Models
Accurate simulation tools for designing, analyzing and optimizing SiC power devices and systems to predict performance, evaluate thermal behavior and streamline development before hardware testing.
MPLAB® SiC Power Simulator
Evaluate device performance quickly by calculating power losses and thermal performance under different conditions for mSiC solutions using lab testing data for common power converter topologies.