Our mSiC™ MOSFET and diode modules, which are available in low-profile, low-stray-inductance and baseplate-less packaging, offer unrivaled ruggedness and performance and increase switching and thermal efficiencies in power electronics. These modules provide flexible options for electrical topology, configuration and materials to maximize your system’s performance. They are easy to integrate into higher-power systems, which simplifies a design, improves optimization and streamlines design validation.
mSiC modules streamline the integration of Silicon Carbide (SiC) into high-voltage power systems to enhance thermal management, improve system-level optimization and speed up the design validation and certification process. Our portfolio of mSiC modules optimizes performance, reliability and space savings, making them well suited for high-power applications.
We have been offering customized power modules since 1983. These power modules are made using different sub-elements, most of which are standard and can be reused to build an infinite array of solutions. We offer a complete engineered solution with mix-and-match capabilities in terms of packages, configuration, performance and cost. Our wide range of available technologies and years of expertise will help speed up your development and reduce the size and cost of your design.
Are you considering a transition to SiC or do you want more out of your SiC-based design that is already in production?
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