HV-D3 mSiC^® Power Modules

The mSiC MOSFETs in these modules exhibit low switching and conduction losses. This improves overall system efficiency, reduces heat generation and enables higher switching frequencies.

These SiC modules support high‑voltage operation of up to 3.3 kV and deliver robust current capability for reliable, high‑power conversion in demanding industrial and energy systems.

By integrating multiple switches and diodes into a single package with standardized terminals, these modules offer simplified assembly and a more compact and reliable solution compared to discrete device implementations.

These modules have a thermal design with silicon nitride (Si₃N₄) substrate, including low junction-to-case thermal resistance and high junction temperature, to support higher power density and less-aggressive cooling requirements.

SiC technology supports fast switching transitions with minimal reverse recovery effects, which enables smaller, passive components and potentially lowers system weight and cost.

These reliable modules are designed for high-voltage applications, with 6 kV insulation, Comparative Tracking Index 600V (CTI 600) case and robust Si₃N₄ substrate that offer high dielectric strength and creepage distances.

These HV‑D3 modules are available in half-bridge and common source configurations and are well-suited for two and multi-level converters.

SiC devices inherently offer better avalanche ruggedness, thermal stability and tolerance to voltage stress, which contributes to longer service life and fewer field failures.

A phase-leg module topology integrates two power switches in a half-bridge configuration, with a high-side and low-side device connected to a shared output node. This topology is commonly used as a building block for single-phase and three-phase inverters, motor drives and power conversion stages where bidirectional current flow and efficient switching are required.

A dual, common-source module topology integrates two power MOSFETs that share a common source connection to provide independent drain terminals. This configuration offers greater flexibility for certain converter architectures, simplifies current sensing and gate drive referencing and is often used in applications such as DC-DC converters, multi-level topologies and specialized inverter designs where control and layout optimization are priorities.

• 3.3 kV SiC MOSFET phase‑leg power module
• High‑current variant: up to 234A
• 6.8 mΩ R_DS(on) (typical)
• Integrated SiC Schottky diodes (zero reverse recovery)
• HV‑D3 package with Kelvin source and Si₃N₄ substrate

• 3.3 kV SiC MOSFET phase‑leg power module
• Lower current/higher resistance option: 120A
• 13.5 mΩ R_DS(on) (typical)
• Optimized for higher switching speed and lower gate charge
• HV‑D3 package with copper baseplate and Kelvin source

• 3.3 kV, dual, common‑source SiC MOSFET power module
• High‑current capability: up to 234A
• R_DS(on): ~6.8 mΩ (typical)
• Common‑source topology enables flexible converter and protection designs
• HV‑D3 package with Si₃N₄ substrate for high reliability