mSiC diodes are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at a low reverse current. Along with reduced switching loss, our SBDs reach a much higher breakdown voltage than silicon and exhibit high repetitive Unclamped Inductive Switching (UIS) capability without degradation.
Our mSiC Schottky Barrier Diodes (SBDs) increase efficiency and add superior reliability in high-voltage applications. SiC diodes exhibit higher breakdown voltage with a lower forward voltage drop and a significantly shorter reverse recover time. mSiC SBDs are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss, enabling more efficient power systems.
Are you considering a transition to SiC or do you want more out of your SiC-based design that is already in production?
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