There are multiple advantages of utilizing SiC devices over traditional silicon devices. SiC MOSFETs enable higher voltage and current capabilities while also greatly improving efficiency. This leads to a smaller system with a higher power density. mSiC MOSFETs also feature unparalleled Unclamped Inductive Switching (UIS) avalanche ratings and gate oxide stability that make them a reliable and rugged solution you can trust.
Our SiC MOSFET portfolio is organized into three product families to meet diverse application requirements. Our comprehensive SiC portfolio, with voltages spanning 700V to 3.3 kV, supports compact, efficient designs and is backed by our robust system solutions and a stable supply chain, with proven performance across aerospace, e-Mobility, industrial and renewable energy applications.
SiC MOSFETs offer exceptional flexibility and performance to deliver increased efficiency and reliability in high-voltage applications. SiC MOSFET technology represents a major advancement in power electronics, enabling the design of more efficient, compact and reliable systems.