We detect you are using an unsupported browser. For the best experience, please visit the site using Chrome, Firefox, Safari, or Edge. X
Maximize Your Experience: Reap the Personalized Advantages by Completing Your Profile to Its Fullest! Update Here
Stay in the loop with the latest from Microchip! Update your profile while you are at it. Update Here
Complete your profile to access more resources.Update Here!

Discrete Silicon Carbide (SiC) Power MOSFET Solutions


SiC MOSFETs are used in medium- to high-voltage power systems and enable higher switching frequencies with improved efficiency, while reducing the system size and the need for redundancy. Our mSiC™ MOSFETs offer unrivaled ruggedness and performance with a wide breadth of solutions with a lower system cost, faster time to market and lower risk. Our solutions come with an oxide lifetime of more than 100 years and a stable body diode, coupled with best-in-class avalanche ruggedness, short circuit capability and neutron susceptibility for improved system reliability and uptime.

Lower System Cost

  • Device redundancy is not needed
  • Ability to focus on the next generation of products instead of redesigning
  • No supply interruption of production

Faster to Market

  • Minimization of system development time
  • Earlier and more revenue
  • Ability to accelerate your innovation process

Lower Risk

  • Higher reliability and system lifetime
  • Lower component count
  • Multiple epi sources and fabs

Highlights


There are multiple advantages of utilizing SiC devices over traditional silicon devices. SiC MOSFETs enable higher voltage and current capabilities while also greatly improving efficiency. This leads to a smaller system with a higher power density. mSiC MOSFETs also feature unparalleled Unclamped Inductive Switching (UIS) avalanche ratings and gate oxide stability that make them a reliable and rugged solution you can trust.

Features

  • High temperature operation (Tj = 175°C) with low RDS(on) shift over full temperature range
  • Industry-leading gate oxide stability (< 100 mV Vth shift)​ and gate oxide lifetime
  • Avalanche (UIS) ruggedness (> 100k pulses)​
  • Long short-circuit withstand time​

Benefits

  • Higher switching frequency and efficiency
  • Higher power density
  • Improved ruggedness
  • Smaller and lighter systems without requiring SiC device redundancy
  • Improved cooling requirements that reduce system cost

Our Advantage

  • Multiple epi sources and dual SiC fab​s ensure long-term supply
  • Unmatched UIS avalanche rating
  • Longest gate oxide withstand time
  • Client-driven obsolescence practice

Explore Our Products


mSiC MOSFET Families


Our SiC MOSFET portfolio is organized into three product families to meet diverse application requirements. Our comprehensive SiC portfolio, with voltages spanning 700V to 3.3 kV, supports compact, efficient designs and is backed by our robust system solutions and a stable supply chain, with proven performance across aerospace, e-Mobility, industrial and renewable energy applications.

mSiC MOSFET Technology


SiC MOSFETs offer exceptional flexibility and performance to deliver increased efficiency and reliability in high-voltage applications. SiC MOSFET technology represents a major advancement in power electronics, enabling the design of more efficient, compact and reliable systems.

Silicon Carbide (SiC) MOSFET Switching Losses

Design Resources


Accelerate your SiC development journey with our industry-leading hardware and software tools, models, simulations and extensive documentation supporting our mSiC products. Explore our comprehensive selection of time-saving SiC reference designs, development tools and resources.

Experts to Accelerate SiC Design

Need Support?


Are you considering a transition to SiC or do you want more out of your SiC-based design that is already in production?

Let's set up a time to talk.











Contact Us for SiC-based Design Support