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Discrete Silicon Carbide (SiC) Power MOSFET Solutions
Lower System Cost
- Device redundancy is not needed
- Ability to focus on the next generation of products instead of redesigning
- No supply interruption of production
Faster to Market
- Minimization of system development time
- Earlier and more revenue
- Ability to accelerate your innovation process
Lower Risk
- Higher reliability and system lifetime
- Lower component count
- Multiple epi sources and fabs
Highlights
There are multiple advantages of utilizing SiC devices over traditional silicon devices. SiC MOSFETs enable higher voltage and current capabilities while also greatly improving efficiency. This leads to a smaller system with a higher power density. mSiC MOSFETs also feature unparalleled Unclamped Inductive Switching (UIS) avalanche ratings and gate oxide stability that make them a reliable and rugged solution you can trust.
Features
- High temperature operation (Tj = 175°C) with low RDS(on) shift over full temperature range
- Industry-leading gate oxide stability (< 100 mV Vth shift) and gate oxide lifetime
- Avalanche (UIS) ruggedness (> 100k pulses)
- Long short-circuit withstand time
Benefits
- Higher switching frequency and efficiency
- Higher power density
- Improved ruggedness
- Smaller and lighter systems without requiring SiC device redundancy
- Improved cooling requirements that reduce system cost
Our Advantage
- Multiple epi sources and dual SiC fabs ensure long-term supply
- Unmatched UIS avalanche rating
- Longest gate oxide withstand time
- Client-driven obsolescence practice
Similar Devices
mSiC MOSFET Families
Our SiC MOSFET portfolio is organized into three product families to meet diverse application requirements. Our comprehensive SiC portfolio, with voltages spanning 700V to 3.3 kV, supports compact, efficient designs and is backed by our robust system solutions and a stable supply chain, with proven performance across aerospace, e-Mobility, industrial and renewable energy applications.
mSiC MOSFET Technology
SiC MOSFETs offer exceptional flexibility and performance to deliver increased efficiency and reliability in high-voltage applications. SiC MOSFET technology represents a major advancement in power electronics, enabling the design of more efficient, compact and reliable systems.
