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GN2470

Status: End of Life

Features:

  • Low voltage drop at high currents
  • Industry standard TO-252 (D-Pak) package
  • 700V breakdown voltage rating
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Overview
Documents
Development Environment
RoHS Information
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Device Overview

Summary

GN2470 is a 700V, 3.5amp insulated gate bipolar transistor (IGBT) that combines the positive aspects of both BJTs and MOSFETs. The GN2470 IGBT has lower on-state voltage drop with high blocking voltage capabilities and features many desirable properties including a MOS input gate, low conduction voltage drop at high currents.

Additional Features
  • Low voltage drop at high currents
  • Industry standard TO-252 (D-Pak) package
  • 700V breakdown voltage rating
Parametrics
Name
Value
BVContinous
700
ICContinous
1
ICPulsed
3.5
Package
TO-252

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (grams)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
GN2470K4-G
1.420000
0.501000
3
DPAK
-
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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