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MCP14700

Dual Input Synchronous MOSFET Driver

Status: In Production

Features:

  • Independent PWM input Control for High-Side and Low-Side Gate Drive
  • inputs are dsPIC compatible
  • 3300 pF in 10.0 ns (typ)
  • Low Supply Current: 80 uA (typ)
  • Source 2.0A (UGATE & LGATE)
  • Sink 2.0A (UGATE) & 4A (LGATE)
  • Internal Bootstrap Blocking Device
  • Supports Floating High-Side Drive
  • 8 Lead surface mount SOIC, 150 mil body
  • 8 Lead 3mmX3mm D
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Overview
Documents
Development Environment
RoHS Information
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Device Overview

Summary

The MCP14700 is a high-speed synchronous MOSFET driver designed to optimally drive a high-side and low-side N-Channel MOSFET.
The MCP14700 has two PWM inputs to allow independent control of the external N-Channel MOSFETs. Since there is no internal cross condition protection circuitry the external MOSFET dead time can be tightly controlled allowing for more efficient systems or unique motor control algorithms.

The transition thresholds for the PWM inputs are typically 1.6V on a rising PWM input signal and typically 1.0V on a falling PWM input signal. This make the MCP14700 ideal suited for controllers that utilize 3.0V TTL/CMOS logic. The PWM inputs are internally pulled low.

The HIGHDR and LOWDR source current capability of the MCP14700 device is typically 2A peak. While the HIGHDR can sink 2A peak typically, the LOWDR can sink 3.5A typically. The low resistance pull-up and pulldown drive allow the MCP14700 to quickly transition a 3300pF load in typically 10ns. Bootstrapping for the high-side drive is internally implemented which allows for a reduced system cost and design complexity.

The MCP14700 is available in a surface mount 8 Lead SOIC package with a body width of 150 mils and the 8 Lead 3mmX3mm DFN package.

Additional Features
    • Independent PWM input Control for High-Side and Low-Side Gate Drive
    • inputs are dsPIC compatible
    • High capacitive load drive Capability:
      • 3300 pF in 10.0 ns (typ)
    • Low Supply Current: 80 uA (typ)
    • High Peak Output Current:
      • Source 2.0A (UGATE & LGATE)
      • Sink 2.0A (UGATE) & 4A (LGATE)
    • Internal Bootstrap Blocking Device
    • Supports Floating High-Side Drive
    • Packaging:
      • 8 Lead surface mount SOIC, 150 mil body
      • 8 Lead 3mmX3mm D
Parametrics
Name
Value
MOSFET Driver Type
Synchronous
Driver Type
Half Bridge Driver
Configuration
Dual Inputs
Peak Output Current (source/sink, A)
2.0/3.5
Output Resistance (source/sink, Ω)
1/1 (0.5 on low side)
Propagation Delay (Td1/Td2, ns)
15/22
Rise/Fall Time (Tr/Tf, ns)
10/10
Capacitive Load Drive
3300 pF in 10 ns
Features
Allows external dead time control

Documents

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Data Sheets

06/24/2015
669KB

Development tools data is currently unavailable.

RoHS Information

Part Number
Device Weight (g)
Shipping Weight (grams)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
MCP14700-E/MF
0.023800
0.041667
8
DFN
3x3x0.9mm
Matte Tin
e3
MCP14700T-E/MF
0.023800
0.172727
8
DFN
3x3x0.9mm
Matte Tin
e3
MCP14700-E/SN
0.078000
0.250000
8
SOIC
.150In(3.90mm)
Matte Tin
e3
MCP14700T-E/SN
0.078000
0.230303
8
SOIC
.150In(3.90mm)
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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