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Silicon Carbide mSiC™ MOSFETs and Schottky Barrier Diodes
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Broad and Flexible Portfolio of mSiC™ Discrete MOSFETs and Diodes
Why Choose Our Discrete mSiC Solutions?
Our mSiC MOSFETs offer unparalleled advantages, including significantly higher output switching frequency and current capability than silicon devices. Their lower RDS(on) and improved thermal performance enable excellent efficiency and high power density with improved system reliability and reduced cooling requirements, resulting in a smaller system size, reduced weight, and cost. mSiC MOSFETs have an unmatched Unclamped Inductive Switching (UIS) avalanche rating and gate oxide stability, ensuring rugged and reliable operation at high switching frequencies.
Our mSiC diodes provide superior reliability and increased efficiency in high-voltage applications. These highly reliable SBDs offer exceptional repetitive UIS capability without any degradation. They also feature balanced surge current, forward voltage and thermal resistance, allowing for lower switching loss and more efficient power systems.
Features
- High-temperature operation (Tj = 175°C) with low RDS(on) shift over full temperature range
- Industry-leading gate oxide stability (< 100 mV Vth shift) and gate oxide lifetime
- Avalanche (UIS) ruggedness (> 100k pulses)
- Long short-circuit withstand time
- High reverse current capability
Benefits
- Higher switching frequency and efficiency
- Higher power density
- Improved ruggedness
- Smaller and lighter systems without requiring SiC device redundancy
- Reduced cooling requirements
- Lower system cost
Advantages We Offer
- Multiple epi sources and dual SiC fabs ensure long-term supply
- Unmatched UIS avalanche rating
- Longest gate oxide withstand time
- Client-driven obsolescence practice
mSiC Technology
mSiC products utilize Silicon Carbide (SiC), a wide bandgap semiconductor material that possesses higher breakdown voltage and thermal conductivity than silicon. Our mSiC products can operate at higher voltages and temperatures without requiring complex cooling systems, making them a cost-effective and energy-efficient solution. They are engineered to lower switching losses, resulting in less heat generated during operation and improving overall efficiency. The technology used in mSiC products improves performance, reduces heat generation and increases energy efficiency in high-voltage power systems.
Demo and Evaluation Boards
The EV84K75A Single-Channel Discrete Gate Driver Evaluation Board is a development platform designed to evaluate and demonstrate the performance of a single-channel gate driver for controlling power transistors in various switching applications.
The EV40T43A Half Bridge Evaluation Board provides a ready-to-use platform for testing and evaluating half-bridge power circuit designs, simplifying development by enabling quick prototyping and performance assessment of power switching applications.
The Power Motherboard (PMB) Fast Evaluation Tool (FET) is designed to provide an easy, versatile and efficient SiC MOSFET testing platform to evaluate conduction and switching losses, perform Double Pulse Testing (DPT), and analyze Buck and Boost converter performance.
Design Resources
SiC Design Resources
Accelerate your development journey with our industry-leading hardware and software tools, models, simulations and extensive documentation supporting mSiC products.
Reference Designs and Development Tools
Explore our comprehensive selection of time-saving SiC reference designs and development tools.
SPICE and PLECS Models
Accurate simulation tools for designing, analyzing and optimizing SiC power devices and systems to predict performance, evaluate thermal behavior and streamline development before hardware testing.
MPLAB® SiC Power Simulator
Evaluate device performance quickly by calculating power losses and thermal performance under different conditions for mSiC solutions using lab testing data for common power converter topologies.