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SST25VF080B

8Mb 2.7-3.6V SPI Serial Flash

Status: In Production

Features:

  • Single Voltage Read and Write Operations– 2.7-3.6V
  • Supports 50 MHz SPI clock (80 MHz no longer available see EOL NOTIFICATION)
  • Endurance: 100,000 Cycles (typical)
  • Greater than 100 years Data Retention
  • Program & Erase Current: 30mA (max)
  • Active Read Current: 10 mA (typical)
  • Standby Current: 5 µA (typical)
  • Uniform 4 KByte sectors
  • Uniform 32 KByte & 64 KByte overlay blocks
  • Chip-Erase Time: 35 ms (typical)
  • Sector-/Block-Erase Time: 18 ms (typical)
  • Byte-Program Time: 7 µs (typical)
  • Decrease total chip programming time over Byte-Program operations
  • Software polling the BUSY bit in Status Register
  • Busy Status readout on SO pin in AAI Mode
  • Suspends a serial sequence to the memory without deselecting the device
  • Enables/Disables the Lock-Down function of the status register
  • Write protection through Block-Protection bits in the status register
  • Commercial: 0°C to +70°C
  • Industrial: -40°C to +85°C
  • Packages Available– 8-lead SOIC (200 mils)– 8-contact WSON (6mm x 5mm)– 8-lead PDIP (300 mils)– 8-bump CSP
  • All devices are RoHS compliant
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Overview
Documents
Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

The SST25VF080B devices are enhanced with improved operating frequency for lower power consumption. SST25VF080B SPI serial flash memories are manufactured with SST's proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Additional Features
    • Single Voltage Read and Write Operations– 2.7-3.6V
    • Serial Interface Architecture
    • Superior Reliability
      • Endurance: 100,000 Cycles (typical)
      • Greater than 100 years Data Retention
    • Low Power Consumption:
      • Program & Erase Current: 30mA (max)
      • Active Read Current: 10 mA (typical)
      • Standby Current: 5 µA (typical)
    • Flexible Erase Capability
      • Uniform 4 KByte sectors
      • Uniform 32 KByte & 64 KByte overlay blocks
    • Fast Erase and Byte-Program:
      • Chip-Erase Time: 35 ms (typical)
      • Sector-/Block-Erase Time: 18 ms (typical)
      • Byte-Program Time: 7 µs (typical)
    • Auto Address Increment (AAI) Programming
      • Decrease total chip programming time over Byte-Program operations
    • End-of-Write Detection
      • Software polling the BUSY bit in Status Register
      • Busy Status readout on SO pin in AAI Mode
    • Hold Pin (HOLD#)
      • Suspends a serial sequence to the memory without deselecting the device
    • Write Protection (WP#)
      • Enables/Disables the Lock-Down function of the status register
    • Software Write Protection
      • Write protection through Block-Protection bits in the status register
    • Temperature Range
      • Commercial: 0°C to +70°C
      • Industrial: -40°C to +85°C
    • Packages Available– 8-lead SOIC (200 mils)– 8-contact WSON (6mm x 5mm)– 8-lead PDIP (300 mils)– 8-bump CSP
    • All devices are RoHS compliant
Parametrics
Name
Value
Density
8 Mbit
Op. Volt Range (V)
2.7 to 3.6
Max. Clock Freq.
50 MHz
Temp Range (°C)
-40°C to +85°C
Endurance
100,000
Data Retention (Years)
100
Bus Modes
SPI

Documents

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Development Environment

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
SST25VF080B-50-4C-S2AF
0.135700
2.700000
8
SOIJ
.208in
NiPdAu
e4
SST25VF080B-50-4C-S2AF-T
0.135700
0.390476
8
SOIJ
.208in
NiPdAu
e4
SST25VF080B-50-4I-S2AF
0.135700
2.700000
8
SOIJ
.208in
NiPdAu
e4
SST25VF080B-50-4I-S2AF-T
0.135700
0.390476
8
SOIJ
.208in
NiPdAu
e4
SST25VF080B-50-4I-S2AE
0.124400
0.266667
8
SOIJ
.208in
Matte Tin
e3
SST25VF080B-50-4I-S2AE-T
0.124400
0.379048
8
SOIJ
.208in
Matte Tin
e3
SST25VF080B-50-4C-QAF-T
0.075800
0.200000
8
TDFN-S
6x5x0.8mm
NiPdAu
e4
SST25VF080B-50-4I-QAF-T
0.075800
0.200000
8
TDFN-S
6x5x0.8mm
NiPdAu
e4
SST25VF080B-50-4I-QAF
0.075800
0.163265
8
TDFN-S
6x5x0.8mm
NiPdAu
e4
SST25VF080B-50-4C-QAF
0.075800
0.163265
8
TDFN-S
6x5x0.8mm
NiPdAu
e4
SST25VF080B-50-4I-ZCE
0.016000
0.087500
16
CSP
Varies
SAC
e1
SST25VF080B-50-4I-QAE
0.073800
0.163265
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
SST25VF080B-50-4I-QAE-T
0.073800
0.200000
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
SST25VF080B-50-4C-PAE
0.486700
0.900000
8
PDIP
.300in
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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