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SST25VF010A

1Mb 2.7-3.6V SPI Serial Flash

Status: In Production

Features:

  • Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
  • Low Power Consumption:– Active Read Current: 7 mA (typical)– Standby Current: 8 µA (typical)
  • Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks
  • Fast Erase and Byte-Program:– Chip-Erase Time: 70 ms (typical)– Sector- or Block-Erase Time: 18 ms (typical)– Byte-Program Time: 14 µs (typical)
  • Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations
  • Packages Available– 8-lead SOIC 150 mil body width– 8-contact WSON (5mm x 6mm)-- 8-bump XFBGA
  • All non-Pb (lead-free) devices are RoHS compliant
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Overview
Documents
Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF010A SPI serial flash memory is manufactured with SST proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Additional Features
    • Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
    • Low Power Consumption:– Active Read Current: 7 mA (typical)– Standby Current: 8 µA (typical)
    • Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks
    • Fast Erase and Byte-Program:– Chip-Erase Time: 70 ms (typical)– Sector- or Block-Erase Time: 18 ms (typical)– Byte-Program Time: 14 µs (typical)
    • Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations
    • Packages Available– 8-lead SOIC 150 mil body width– 8-contact WSON (5mm x 6mm)     -  8-bump XFBGA
    • All non-Pb (lead-free) devices are RoHS compliant
Parametrics
Name
Value
Density
1 Mbit
Op. Volt Range (V)
2.7 to 3.6
Max. Clock Freq.
33 MHz
Write Protect
Quarter, Half, Whole Array
Temp Range (°C)
-40°C to +85°C
Endurance
100,000
Bus Modes
SPI

Documents

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Board Design Files

Development Environment

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Dimension
Solder Composition
JEDEC Indicator
RoHS
China EFUP
SST25VF010A-10-4C-V-CZ112
0.000000
1000.000
0
Wafer
Varies
-
-
SST25VF010A-33-4I-VC
0.000000
1000.000
0
WAFER
Varies
-
-
SST25VF010A-W-C
0.000000
1000.000
0
WAFER
Varies
-
-
SST25VF010A-33-4I-V-WAA
0.000000
1000.000
0
Wafer
Varies
-
-
SST25VF010A-33-4I-ZAE
0.005000
0.088333
8
CSP
Varies
SAC
e1
SST25VF010A-33-4C-SAE
0.078000
0.250000
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25VF010A-33-4C-SAE-PP013
0.078000
0.250000
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25VF010A-33-4C-SAE-PP013-T
0.078000
0.230303
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25VF010A-33-4C-SAE-T
0.078000
0.230303
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25VF010A-33-4I-SAE
0.078000
0.250000
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25VF010A-33-4I-SAE-OZM
0.078000
0.250000
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25VF010A-33-4I-SAE-OZM-T
0.078000
0.230303
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25VF010A-33-4I-SAE-T
0.078000
0.230303
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25VF010A-33-4C-SAE-U60
0.078000
0.250000
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25VF010A-33-4C-SAE-U60-T
0.078000
0.230303
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25VF010A-33-4C-QAE
0.073800
0.163265
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
SST25VF010A-33-4C-QAE-T
0.073800
0.200000
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
SST25VF010A-33-4I-QAE
0.073800
0.163265
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
SST25VF010A-33-4I-QAE-T
0.073800
0.200000
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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