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MIC5060

Ultra Small High Side MOSFET Driver

Status: In Production

Features:

  • +2.75V to +30V operation
  • 100µA maximum supply current (5V supply)
  • 15µA typical off-state current
  • Internal charge pump
  • TTL-compatible input
  • Withstands 60V transient (load dump)
  • Reverse battery protected to –20V
  • Inductive spike protected to –20V
  • Overvoltage shutdown at 35V
  • Internal 15V gate protection
  • Minimum external parts
  • Operates in high-side or low-side configurations
  • 1µA control input pull-off
  • Available in 8-pin 3mm x 3mm MLF® package
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Overview
Documents
Development Environment
RoHS Information
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Device Overview

Summary

The MIC5060 MOSFET driver is designed for gate control of N-Channel, enhancement-mode, and power MOSFETs used as high-side or low-side switches. The MIC5060 can sustain an on-state output indefinitely.

The MIC5060 operates from a 2.75V to 30V supply. In high-side configurations, the driver can control MOSFETs that switch loads of up to 30V. In low-side configurations, with separate supplies, the maximum switched voltage is limited only by the MOSFET.

The MIC5060 has a non-inverting, TTL-compatible control input. The MIC5060 features an internal charge pump that can sustain a gate voltage greater than the available supply voltage. The driver is capable of turning on a logic-level MOSFET from a 2.75V supply or a standard MOSFET from a 5V supply. The gate-to-source output voltage is internally limited to approximately 15V.

The MIC5060 is protected against automotive load dump, reversed battery, and inductive load spikes of -20V. The driver's overvoltage shutdown feature turns off the external MOSFET at approximately 35V to protect the load against power supply excursions. The MIC5060 is available in a 3mm x 3mm MLF® package.

Additional Features
    • +2.75V to +30V operation
    • 100µA maximum supply current (5V supply)
    • 15µA typical off-state current
    • Internal charge pump
    • TTL-compatible input
    • Withstands 60V transient (load dump)
    • Reverse battery protected to –20V
    • Inductive spike protected to –20V
    • Overvoltage shutdown at 35V
    • Internal 15V gate protection
    • Minimum external parts
    • Operates in high-side or low-side configurations
    • 1µA control input pull-off
    • Available in 8-pin 3mm x 3mm MLF® package
Parametrics
Name
Value
MOSFET Driver Type
High Side
Driver Type
High-Side or Low Side Single
Configuration
Non-Inverting
Peak Output Current (source/sink, A)
800uA*
Output Resistance (source/sink, Ω)
n/a
Maximum Supply Voltage (V)
30
Propagation Delay (Td1/Td2, ns)
n/a
Rise/Fall Time (Tr/Tf, ns)
90us/6us
Capacitive Load Drive
1000 pF in 60 µs
Features
Withstands 60V transient and Reverse battery protected to –20V

Documents

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Data Sheets

Development Environment

  • Demo & Evaluation Boards
Demo & Evaluation Boards
MIC5060YML Evaluation Board
MIC5060YML Evaluation Board ( MIC5060YML-EV )

The MIC5060 MOSFET driver is designed for gate control of N-channel, enhancement-mode, and power MOSFETs used as high-side or low-side switches. The MIC5060 can sustain an on-state output indefinitely. The MIC5060 features an internal charge pump that can sustain a gate voltage greater than the available supply voltage. The driver is capable of turning on a logic-level MOSFET from a 2.75V supply...

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (grams)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
MIC5060YML-TR
0.022900
0.802200
8
VDFN
3x3x0.9mm
NiPdAu
e4
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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