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MIC5018

IttyBitty™ High Side MOSFET Driver

Status: In Production

Features:

  • +2.7V to +9V operation
  • 150µA typical supply current at 5V supply
  • ≤1µA typical standby (off) current
  • Charge pump for high-side low-voltage applications
  • Internal zener diode gate-to-ground MOSFET protection
  • Operates in low- and high-side configurations
  • TTL compatible input
  • ESD protected
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Overview
Documents
Development Environment
RoHS Information
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Device Overview

Summary

The MIC5018 IttyBitty® high-side MOSFET driver is designed to switch an N-channel enhancement-type MOSFET from a TTL compatible control signal in high- or low-side switch applications. This driver features the tiny 4-lead SOT-143 package.

The MIC5018 is powered from a +2.7V to +9V supply and features extremely low off-state supply current. An internal charge pump drives the gate output higher than the driver supply voltage and can sustain the gate voltage indefinitely. An internal zener diode limits the gate-to-source voltage to a safe level for standard N-channel MOSFETs.

In high-side configurations, the source voltage of the MOSFET approaches the supply voltage when switched on. To keep the MOSFET turned on, the MIC5018's output drives the MOSFET gate voltage higher than the supply voltage. In a typical high-side configuration, the driver is powered from the load supply voltage. Under some conditions, the MIC5018 and MOSFET can switch a load voltage that is slightly higher than the driver supply voltage.

In a low-side configuration, the driver can control a MOSFET that switches any voltage up to the rating of the MOSFET. The gate output voltage is higher than the typical 3.3V or 5V logic supply and can fully enhance a standard MOSFET.

The MIC5018 is available in the SOT-143 package and is rated for -40°C to +85°C ambient temperature range.

Additional Features
    • +2.7V to +9V operation
    • 150µA typical supply current at 5V supply
    • ≤1µA typical standby (off) current
    • Charge pump for high-side low-voltage applications
    • Internal zener diode gate-to-ground MOSFET protection
    • Operates in low- and high-side configurations
    • TTL compatible input
    • ESD protected
Parametrics
Name
Value
MOSFET Driver Type
High Side
Driver Type
High-Side or Low Side Single
Configuration
Non-Inverting
Peak Output Current (source/sink, A)
10uA*
Output Resistance (source/sink, Ω)
n/a
Maximum Supply Voltage (V)
9
Propagation Delay (Td1/Td2, ns)
n/a
Rise/Fall Time (Tr/Tf, ns)
750us/10us
Capacitive Load Drive
3,000pF in 2.1 ms
Features
Smal Package

Documents

Jump to:

Data Sheet

11/05/2015
208KB

User Guides

11/11/2015
27KB

Development tools data is currently unavailable.

RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
MIC5018YM4-TR
0.011000
0.036000
4
SOT-143
-
NiPdAu
e4
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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