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MIC4101

100V Half Bridge MOSFET Drivers

Status: In Production

Features:

  • Bootstrap supply max voltage to 118V DC
  • Supply voltage up to 16V
  • Drives high- and low-side N-Channel MOSFETs with independent inputs
  • CMOS input thresholds (MIC4100)
  • TTL input thresholds (MIC4101)
  • On-chip bootstrap diode
  • Fast 30ns propagation times
  • Drives 1000pF load with 10ns rise and fall times
  • Low power consumption
  • Supply under-voltage protection
  • 3Ω pull up, 3Ω pull down output resistance
  • Space saving SOIC-8L package
  • -40°C to +125°C junction temperature range
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Overview
Documents
Development Environment
RoHS Information
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Device Overview

Summary

The MIC4100/1 are high frequency, 100V Half Bridge MOSFET driver ICs featuring fast 30ns propagation delay times. The low-side and high-side gate drivers are independently controlled and matched to within 3ns typical. The MIC4100 has CMOS input thresholds, and the MIC4101 has TTL input thresholds. The MIC4100/1 include a high voltage internal diode that charges the high-side gate drive bootstrap capacitor. A robust, high-speed, and low power level shifter provides clean level transitions to the high side output. The robust operation of the MIC4100/1 helps ensure the outputs are not affected by supply glitches, HS ringing below ground, or HS slewing with high speed voltage transitions. Under-voltage protection is provided on both the low-side and high-side drivers. The MIC4100 is available in the SOIC-8L package with a junction operating range from -40°C to +125°C.

Additional Features
    • Bootstrap supply max voltage to 118V DC
    • Supply voltage up to 16V
    • Drives high- and low-side N-Channel MOSFETs with independent inputs
    • CMOS input thresholds (MIC4100)
    • TTL input thresholds (MIC4101)
    • On-chip bootstrap diode
    • Fast 30ns propagation times
    • Drives 1000pF load with 10ns rise and fall times
    • Low power consumption
    • Supply under-voltage protection
    • 3Ω pull up, 3Ω pull down output resistance
    • Space saving SOIC-8L package
    • -40°C to +125°C junction temperature range
Parametrics
Name
Value
MOSFET Driver Type
Synchronous
Driver Type
Half Bridge Driver
Configuration
Dual Inputs
Peak Output Current (source/sink, A)
2.0/2.0
Output Resistance (source/sink, Ω)
2.5/2.0
Propagation Delay (Td1/Td2, ns)
31/31
Rise/Fall Time (Tr/Tf, ns)
10/10
Capacitive Load Drive
1000 pF in 27 ns

Documents

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Data Sheet

11/05/2015
790KB

Development tools data is currently unavailable.

RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
MIC4101YM-TR
0.075000
0.250000
8
SOIC
3.90mm(.150in)
NiPdAu
e4
MIC4101YM
0.075000
0.163265
8
SOIC
3.90mm(.150in)
NiPdAu
e4
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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