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47L64

64 Kb I2C Serial EERAM

Status: Future Product

Features:

  • 8,192 x 8 bit Serial SRAM with internal nonvolatile data backup
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Device Overview

Summary

EERAM is an SRAM that doesn't lose its content on a power disruption.  Inside each memory cell, transparent to the user, are nonvolatile transistors that capture the SRAM content and hold it through power loss events. On power restore, the SRAM is reloaded with its last content and SRAM operation can continue.

Additional Features
  • 8,192 x 8 bit Serial SRAM with internal nonvolatile data backup
  • I2C Interface: Up to 3MHz with Schmitt trigger inputs for noise suppression
  • Low-Power CMOS Technology: Active current: 5 mA (maximum); Standby current: 500 μA (maximum); Hibernate current: 3 μA (maximum)
  • Cell-Based Nonvolatile Backup mirrors SRAM array cell-for-cell and transfers all data to/from SRAM cells in parallel (all cells at same time)
  • Invisible-to-User Data Transfers: VCC level monitored inside device, SRAM automatically saved on power disrupt, SRAM automatically restored on VCC return
  • 100,000 Backups Minimum (at 20°C)
  • 100 years retention (at 20°C)
  • Operating Voltage Range: 2.7V-3.6V
  • Temperature Range Industrial (I) -40 to 85ºC, Extended (E) -40 to 125ºC
  • 8-SOIC (150mil wide) package; 8-DFN (2x3mm) package
Parametrics
Name
Value
Density
64 Kb
Op. Volt Range (V)
2.7 to 3.6
Max. Clock Freq.
66MHz
Page Size (bytes)
1
Temp Range (°C)
-40°C to +85°C
Endurance
100000
Data Retention (Years)
100
Bus Modes
SPI

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Development Environment

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Integrated Development Environments
MPLAB-X-IDE
MPLAB X Integrated Development Environment (IDE) ( MPLAB-X-IDE )

MPLAB® X Integrated Development Environment (IDE) is an expandable, highly configurable software program that incorporates powerful tools to help you discover, configure, develop, debug and qualify embedded designs for most of Microchip’s microcontrollers, microprocessors and digital signal controllers.
MPLAB X IDE works seamlessly with the MPLAB development ecosystem of

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