Overview
The 300 W Bi-Directional 1/16th Brick Power Module reference design, developed in collaboration with Efficient Power Conversion Corp. (EPC), features the dsPIC33CK32MP102 Digital Signal Controller (DSC) which is ideal for Switched-Mode Power Supply (SMPS) applications as the main controller implementing interleaved, non-isolated synchronous buck converter power module. The power stage features the 12.5 A ePower™ Stage device EPC2152, a monolithic eGaN® FET half bridge power stage with integrated eGaN® FET drivers.
Embedding the driver circuit and the power FETs into the same monolithic die minimizes the common source inductance (CSI) between the high- and low-side FETs as well as the gate drive loop inductance. By matching the drivers to the power FETs results in extreme switching speeds of 48 V / 1 ns and minimum switching losses. The 3.3V compatible input levels allow directly driving the power stage from a dsPIC33 DSC’s pin without requiring additional components with maximum edge placement precision.
For more information on hardware-related documentation, design files and purchasing information, please visit the reference design page.
Product Features
•High efficiency: 95% @ 12 V/25 A output (buck)
95% @ 48V/5.5 A output (boost)
•Small size: 33 mm x 22.9 mm x 9 mm (1.30 in. x 0.90 in. x 0.35 in.)
•Industry standard footprint and pinout
• Power good output
• Enable input
• Constant switching frequency: 500 kHz
• Remote output voltage sense (buck)
• Re-programmable average current mode control (default)
• Fault protection:
o Input under voltage lock out (UVLO)
o Input over voltage lock out (OVLO)
o Output over current limit (OCL)
o Output over current protection (OCP)
o Regulation error (REGERR)
o Over Temperature Protection (OTP)
Applications:
•Datacenter
•Server
• 48 V Power Supply
• PCIe cards and Storage
• Computing
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EPC is the leader in enhancement-mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low-cost satellites.
eGaN® FETs and integrated circuits provide the fast switching, small size and low cost that can meet the stringent power density requirements of these leading-edge applications with low component count and solution cost |