Microchip logo
  • All
  • Products
  • Documents
  • Applications Notes
product primary image

SST12CP11

Status: Not Recommended for new designs

Features:

  • High Gain: – Typically 33 dB gain across 2.4–2.5 GHz over temperature -40°C to +85°C
  • High linear output power: – >30 dBm P1dB – Meets 802.11g OFDM spectrum mask requirement up to 28.5 dBm – EVM~3% up to 25 dBm for 54 Mbps 802.11g signal – 2.5% EVM up to 23.5 dBm, 802.11n, HT40 – 1.75% EVM up to 21.5 dBm, 802.11ac MCS8 – Meets 802.11b ACPR requirement up to 28.5 dBm Applications:
  • WLAN (IEEE 802.11b/g/n/ac)
  • WiMax (IEEE 802.16e)
  • Home RF
  • Cordless phones
  • 2.4 GHz ISM wireless equipment
View More
Overview
Documents
Development Environment
Similar Devices
RoHS Information
Buy Now

Device Overview

Summary

The SST12CP11 is a high-power and high-gain power amplifier (PA) based on the highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It typically provides 34 dB gain and has excellent linearity, typically ~3% added EVM at 25 dBm output power, which is essential for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 28.5 dBm. The power amplifier IC also features easy board-level usage along with high-speed power-up/-down control. The SST12CP11 is offered in 16-contact VQFN package.

Additional Features
  • High Gain:– Typically 33 dB gain across 2.4–2.5 GHz over temperature-40°C to +85°C
  • High linear output power:– >30 dBm P1dB– Meets 802.11g OFDM spectrum mask requirement up to 28.5 dBm– EVM~3% up to 25 dBm for 54 Mbps 802.11g signal– 2.5% EVM up to 23.5 dBm, 802.11n, HT40– 1.75% EVM up to 21.5 dBm, 802.11ac MCS8– Meets 802.11b ACPR requirement up to 28.5 dBmApplications:
  • WLAN (IEEE 802.11b/g/n/ac)
  • WiMax (IEEE 802.16e)
  • Home RF
  • Cordless phones
  • 2.4 GHz ISM wireless equipment
Parametrics
Name
Value
Type
Power Ampllifier
Gain
34
Linear Power
25
Voltage min
3.0
Voltage max
5
Freq min
2.4
Freq max
2.4
Technology
InGaP/GaAs HBT
Application
802.11b/g/n

Documents

Jump to:

Development tools data is currently unavailable.

Similar Devices

Product
Description
Gain
Linear Power
Voltage (V)
Price 5K
High Efficiency IEEE 802.11 a/n/ac PA
26 - 29
17.5/19.5
3 - 5
$0.66
High Power IEEE 802.11 a/n PA
28-34
20
3.0 - 4.2
$0.75
High Power IEEE 802.11 b/g/n PA
34
25
3.0 - 5
$1.07
2.4 GHz High Power IEEE 802.11b/g/n/256QAM Power Amplifier
37
25
4.0 - 5.5
$0.76
50 Ohm-matched 2.4GHz FEM with PA+LNA+BT bypass
28
19
3 - 4.2
$0.68
50 Ohm Fully Matched LNA: 2.4GHz
12
 
3.0 - 4.2
$0.50
Normal Power IEEE 802.11 b/g PA
28
20.5
3.0 - 4.2
$0.34
High Gain IEEE 802.11 b/g/n PA
30
20
2.75 - 4.2
$0.32
 
30
20
3.0 - 4.2
$0.63
High Power IEEE 802.11 b/g/n PA
32
22
3.0 - 4.2
$0.65
High Power IEEE 802.11 b/g/n PA
32
22
3.0 - 4.2
$0.53

RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
SST12CP11-QVCE
0.025300
0.154333
16
VQFN
3x3x0.9mm
Matte Tin
e3
SST12CP11C-QUCE
0.133333
16
UQFN
3x3x0.55mm
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

Buy from the Microchip Store

Grid
View
Table
View
Filter:
Apply
Clear
Only show products with samples
Product
Leads
Package Type
Temp Range
Packing Media
5K Pricing
Buy