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MD1210

MOSFET, High Speed, Dual Driver

Status: Not Recommended for new designs

Features:

  • 6ns rise and fall time with 1000pF load
  • 2.0A peak output source/sink current
  • 1.2V to 5.0V input CMOS compatible
  • 4.5V to 13V single positive supply voltage
  • Smartlogic threshold
  • Low jitter design
  • Two matched channels
  • Outputs can swing below ground
  • Low inductance package
  • Thermally-enhanced package
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Overview
Documents
Development Environment
RoHS Information
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Device Overview

Summary

MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high output current for a capacitive load. The high-speed input stage of the MD1210 can operate from 1.2V to 5.0V logic interface with an optimum operating input signal range of 1.8V to 3.3V. An adaptive threshold circuit is used to set the level translator switch threshold to the average of the input logic 0 and logic 1 levels. The input logic levels may be ground referenced, even though the driver is putting out bipolar signals. The level translator uses a proprietary circuit, which provides DC coupling together with high-speed operation. VDD1, VDD2, and VH should be connected to the positive supply voltage, and VSS1, VSS2, and VL should be connected to 0V or to Ground. The GND pin is the logic control input signal digital ground. The output stage is capable of peak currents of up to ±2.0A, depending on the supply voltages used and load capacitance present. The OE pin serves a dual purpose. First, its logic H level is used to compute the threshold voltage level for the channel input level translators. Secondly, when OE is low, the outputs are disabled, with the A output high and the B output low. This assists in properly pre-charging the AC coupling capacitors that may be used in series in the gate drive circuit of an external PMOS and NMOS transistor pair.

Please consider this device MD1213

Additional Features
  • 6ns rise and fall time with 1000pF load
  • 2.0A peak output source/sink current
  • 1.2V to 5.0V input CMOS compatible
  • 4.5V to 13V single positive supply voltage
  • Smartlogic threshold
  • Low jitter design
  • Two matched channels
  • Outputs can swing below ground
  • Low inductance package
  • Thermally-enhanced package
Parametrics
Name
Value
# of Channels
2
Input Voltage min (V)
1.2
Input Voltage max (V)
5
Output Voltage Bipolar (V)
--
Output Voltage Unipolar (V)
0 - 12
Package
QFN-12

Documents

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Application Notes


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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
MD1210K6-G
0.025400
0.139394
12
QFN
4x4x0.9mm
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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