The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
The body of the transistor is connected to the gate pin. The channel is therefore being pinched off by both the gate and body. The gate pin will have a diode connected to the drain terminal and another diode connected to the source terminal.