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LND01

MOSFET, Lateral N-Channel Depletion-Mode

Status: In Production

Features:

  • Bi-directional
  • Low on-resistance
  • Low input capacitance
  • Fast switching speeds
  • High input impedance and high gain
  • Low power drive requirement
  • Ease of paralleling
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Overview
Documents
Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The body of the transistor is connected to the gate pin. The channel is therefore being pinched off by both the gate and body. The gate pin will have a diode connected to the drain terminal and another diode connected to the source terminal.

Additional Features
    • Bi-directional
    • Low on-resistance
    • Low input capacitance
    • Fast switching speeds
    • High input impedance and high gain
    • Low power drive requirement
    • Ease of paralleling
Parametrics
Name
Value
BVdsx min (V)
9
RDS
1.4
Vgs(off) min (V)
-0.8
Vgs(off) max (V)
-3.0
Package
SOT-23

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (grams)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
LND01K1-G
0.016000
0.049000
5
SOT-23
-
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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