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Discrete Silicon Carbide (SiC) Schottky Barrier Diode Solutions


mSiC™ Schottky Barrier Diodes (SBDs) leverage SiC technology to offer unrivaled ruggedness and performance. Our SiC diodes range from 700V to 3.3 kV in a variety of topologies to give you flexible options for increasing the power density and reliability in your system design. mSiC diodes enable you to create high-voltage power applications with a smaller footprint, lower weight and reduced cost.

Lower System Cost

  • Device redundancy is not needed
  • Ability to focus on the next generation of products instead of redesigning
  • No supply interruption of production

Faster to Market

  • Minimization of system development time
  • Earlier and more revenue
  • Ability to accelerate your innovation process

Lower Risk

  • Higher reliability and system lifetime
  • Lower component count
  • Multiple epi sources and fabs

Highlights


mSiC diodes are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at a low reverse current. Along with reduced switching loss, our SBDs reach a much higher breakdown voltage than silicon and exhibit high repetitive Unclamped Inductive Switching (UIS) capability without degradation.

Features

  • No reverse recovery charge
  • High reverse current capability
  • Low forward voltage
  • Low leakage current
  • Avalanche (UIS) ruggedness (> 100k pulses)​
  • Long short-circuit withstand time​
  • High temperature operation (Tj = 175°C)

Benefits

  • Low switching loss
  • Higher power density
  • Improved ruggedness
  • Smaller and lighter systems without requiring SiC device redundancy
  • Reduced cooling requirements
  • Lower system cost

Our Advantage

  • Multiple epi sources and dual SiC fab​s ensure long-term supply
  • Unmatched UIS avalanche rating
  • Longest gate oxide withstand time
  • Client-driven obsolescence practice

Explore Our Products


mSiC Diode Technology


Our mSiC Schottky Barrier Diodes (SBDs) increase efficiency and add superior reliability in high-voltage applications. SiC diodes exhibit higher breakdown voltage with a lower forward voltage drop and a significantly shorter reverse recover time. mSiC SBDs are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss, enabling more efficient power systems.

Silicon Carbide (SiC) Diode Recovery Charge vs. Forward Voltage Drop

Design Resources

Accelerate your development journey with our industry-leading hardware and software tools, models, simulations and extensive documentation supporting our mSiC products. Explore our comprehensive selection of time-saving SiC reference designs, development tools and resources.

Experts to Accelerate SiC Design

Need Support?


Are you considering a transition to SiC or do you want more out of your SiC-based design that is already in production?

Let's set up a time to talk.