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SST38LF6401RT

64-Mbit (x16) Radiation Tolerant Flash

Status: Samples Available

Features:

  • Organized as 4M x16
  • No Single Event Latch-up Below a LET Threshold of 78 MeV.cm2 /mg @125°C
  • Total ionizing dose of 50kRad (Biased) / 100kRad (Unbiased)
  • 48-lead TSOP
  • 48-lead Ceramic dual flat pack
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  • Radiation Data
    Available

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Device Overview

Summary

The SST38VF6401RT is a 4M x16, Radiation Tolerant device manufactured with Microchip’s proprietary, high-performance CMOS Super-Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. This process achieves an unbiased 100Krad of radiation tolerance. The SST38VF6401RT writes (Program or Erase) with a 3.0 to 3.6V power supply and conforms to JEDEC standard pinouts and command sets for x16 flash memories.

Additional Features
  • Main Characteristics
    • Organized as 4M x16
    • Superior Reliability : Endurance: up to 10,000 Cycles minimum / Greater than 100 years Data Retention
    • Low Power Consumption (typical values at 5 MHz) : Active Current: 4 mA (typical) / Standby Current: 3 µA (typical) / Auto Low Power Mode: 3 µA (typical)
    • Security-ID Feature : 256 Word, user One-Time-Programmable / 128-bit Unique ID
    • Protection and Security Features : Hardware Boot Block Protection/WP# Input Pin,Uniform (32 KWord) and Non-Uniform (8 KWord) options available / User-controlled individual block (32 KWord) protection,using software only methods / Password protection
    • Hardware Reset Pin (RST#)
    • Fast Read and Page Read Access Times: 90 ns Read access time / 25 ns Page Read access times / 4-Word Page Read buffer
    • Latched Address and Data
    • Fast Erase Times: Sector-Erase Time: 18 ms (typical) / Block-Erase Time: 18 ms (typical) / Chip-Erase Time: 40 ms (typical)
    • Erase-Suspend/-Resume Capabilities
    • Fast Word and Write-Buffer ProgrammingTimes: Word-Program Time: 7 µs (typical) / Write Buffer Programming Time: 1.75 µs Word(typical) / 16-Word Write Buffer
    • Automatic Write Timing : Internal VPP Generation
    • End-of-Write Detection : Toggle Bits / Data# Polling / RY/BY# Output
    • CMOS I/O Compatibility
    • JEDEC Standard: Flash EEPROM Pinouts and command sets
    • CFI Compliant
  • Voltage
    • Single Voltage Read and Write Operations 3.0-3.6V
  • Radiation Performances
    • No Single Event Latch-up Below a LET Threshold of 78 MeV.cm2 /mg @125°C
    • SEU Rate < 1 x 10-16 upsets/bit-day
    • SEFI Threshold > 60 MeV.cm2 /mg (LET)
    • Total ionizing dose of 50kRad (Biased) / 100kRad (Unbiased)
  • Packages
    • 48-lead TSOP
    • 48-lead Ceramic dual flat pack

Documents

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Development Environment

  • Demo & Evaluation Boards
Demo & Evaluation Boards
Parallel SuperFlash Kit 1
Parallel SuperFlash Kit 1 ( AC243006-1 )

The Parallel Flash PICtailTM Plus Daughter Board is an evaluation board designed to interface with PICtailTM Plus connector found on the Explorer 16 Development Board. The Parallel SuperFlash® Kit 1 contains two Parallel Flash PICtailTM Plus Daughter Boards.

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Dimension
Solder Composition
JEDEC Indicator
RoHS
China EFUP
SST38LF6401-90-RT/3YB-E
0.000000
0.000000
48
MFPF
19x13.44x2.78mm
NiAu
e4
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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