Microchip logo
Microchip logo
  • All
  • Products
  • Documents
  • Applications Notes
product primary image

SST12LP15A

Status: Not Recommended for new designs

Features:

  • High Gain: – Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C
  • High linear output power: – >29 dBm P1dB – Meets 802.11g OFDM ACPR requirement up to 25 dBm – Added EVM~4% up to 23 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 25 dBm
  • High power-added efficiency/Low operating current for both 802.11g/b applications – ~26%/300 mA @ POUT = 24 dBm for 802.11g – ~27%/350 mA @ POUT = 25 dBm for 802.11b Applications:
  • WLAN (IEEE 802.11b/g/n)
  • Home RF
  • Cordless phones
  • 2.4 GHz ISM wireless
View More
Overview
Documents
Development Environment
Similar Devices
RoHS Information
Buy Now

Device Overview

Summary

The SST12LP15A is a high-power and high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with superb power-added efficiency while operating over the 2.4-2.5 GHz frequency band, it typically provides 32 dB gain with 26% power-added efficiency @ POUT = 24 dBm for 802.11g and 27% power-added efficiency @ POUT = 25 dBm for 802.11b. The SST12LP15A has excellent linearity while meeting 802.11g spectrum mask at 25 dBm. The power amplifier IC features easy board-level usage along with high-speed power-up/down control and is offered in 16-contact VQFN package.

Please consider this device SST12LP15B

Additional Features
  • High Gain:– Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C
  • High linear output power:– >29 dBm P1dB– Meets 802.11g OFDM ACPR requirement up to 25 dBm– Added EVM~4% up to 23 dBm for 54 Mbps 802.11g signal– Meets 802.11b ACPR requirement up to 25 dBm
  • High power-added efficiency/Low operating current for both 802.11g/b applications– ~26%/300 mA @ POUT = 24 dBm for 802.11g– ~27%/350 mA @ POUT = 25 dBm for 802.11bApplications:
  • WLAN (IEEE 802.11b/g/n)
  • Home RF
  • Cordless phones
  • 2.4 GHz ISM wireless
View Block Diagrams

Parametrics
Name
Value
Type
Power Ampllifier
Gain
32
Linear Power
22
Voltage min
3.0
Voltage max
4.2
Freq min
2.4
Freq max
2.4
Technology
InGaP/GaAs HBT
Application
802.11b/g/n

Block Diagram

(Click the image to view interactive diagram)
No records are available.

Documents

Jump to:

Development tools data is currently unavailable.

Similar Devices

Product
Description
Gain
Linear Power
Voltage (V)
Price 5K
High Efficiency IEEE 802.11 a/n/ac PA
26 - 29
17.5/19.5
3 - 5
$0.66
High Power IEEE 802.11 a/n PA
28-34
20
3.0 - 4.2
$0.75
High Power IEEE 802.11 b/g/n PA
34
25
3.0 - 5
$1.07
2.4 GHz High Power IEEE 802.11b/g/n/256QAM Power Amplifier
37
25
4.0 - 5.5
$0.76
50 Ohm-matched 2.4GHz FEM with PA+LNA+BT bypass
28
19
3 - 4.2
$0.68
50 Ohm Fully Matched LNA: 2.4GHz
12
 
3.0 - 4.2
$0.50
Normal Power IEEE 802.11 b/g PA
28
20.5
3.0 - 4.2
$0.34
High Gain IEEE 802.11 b/g/n PA
30
20
2.75 - 4.2
$0.32
 
30
20
3.0 - 4.2
$0.63
High Power IEEE 802.11 b/g/n PA
32
22
3.0 - 4.2
$0.65
High Power IEEE 802.11 b/g/n PA
32
22
3.0 - 4.2
$0.53

RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
SST12LP15A-QVCE
0.025300
0.154333
16
VQFN
3x3x0.9mm
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

Buy from the Microchip Store

Grid
View
Table
View
Filter:
Apply
Clear
Only show products with samples
Product
Leads
Package Type
Temp Range
Packing Media
5K Pricing
Buy