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LP0701

P-Channel Enhancement-Mode LATERAL MOSFET

Status: In Production

Features:

  • Ultra-low threshold
  • High input impedance
  • Low input capacitance
  • Fast switching speeds
  • Low on-resistance
  • Freedom from secondary breakdown
  • Low input and output leakage
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Overview
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Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. The low threshold voltage and low on-resistance characteristics are ideally suited for hand held, battery operated applications.

Additional Features
  • Ultra-low threshold
  • High input impedance
  • Low input capacitance
  • Fast switching speeds
  • Low on-resistance
  • Freedom from secondary breakdown
  • Low input and output leakage
Parametrics
Name
Value
BVdss min (V)
-16.5
Rds (on) max (Ω)
1.5
CISSmax (pF)
250
Vgs(th) max (V)
-1.0
Package
TO-92, SOIC-8

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (grams)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
LP0701LG-G
0.078000
0.230303
8
SOIC
.150In(3.90mm)
Matte Tin
e3
LP0701N3-G
0.203400
0.219000
3
TO-92
-
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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