Microchip Technology Inc
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SST26WF080B

Status: In Production

Features:

  • Serial Interface Architecture: Nibble-wide multiplexed I/O’s with SPI-like serial command structure
  • Mode 0 and Mode 3
  • x1/x2/x4 Serial Peripheral Interface (SPI) Protocol -Burst Modes
  • Continuous linear burst, 8/16/32/64 Byte linear burst with wrap-around
  • Page-Program: 256 Bytes per page in x1 or x4 mode
  • Flexible Erase Capability: Uniform 4 KByte sectors, Four 8 KByte top and bottom parameter overlay blocks, One 32 KByte top and bottom overlay block, Uniform 64 KByte overlay blocks
  • Software Write Protection: Individual Block-Locking: 64 KByte blocks, two 32 KByte blocks, and eight 8 KByte parameter blocks
  • Low Power Consumption: Active Read current: 15 mA (typical at 104 MHz), Standby Current: 10 µA (typical)
  • SFDP (Serial Flash Discoverable Parameters)
  • Packages Available: 8-contact WSON (6mm x 5mm), 8-lead SOIC (150 mil), 8-contact USON (2mm x 3mm), 8-ball XFBGA (Z-Scale)
  • All devices are RoHS compliant
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Overview
Documents
Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

The SST26WF080B/080BA Serial Quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O serial interface to boost performance while maintaining the compact form factor of standard serial flash devices. SST26WF080B/080BA also supports full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol. Operating at frequencies reaching 104 MHz, the SST26WF080B/080BA enables minimum latency execute-in-place (XIP) capability without the need for code shadowing on an SRAM. The SST26WF080B/080BA writes (Program or Erase) with a single power supply of 1.65-1.95V and significantly lower power consumption. The device’s low power consumption makes it the ideal choice for Mobile handset, Bluetooth, GPS, camera module, table, hearing aid and any battery powered devices. Further benefits are achieved with SST’s proprietary, high-performance CMOS SuperFlash® technology, which significantly improves performance and reliability.

The SST26WF080B default at power up is with WP# and HOLD pins enable and SIO2 and SIO3 pins disable allowing for SPI protocol operations without register configuration.
The SST26WF080BA default at power up is with WP# and HOLD pins disable and SIO2 and SIO3 pins enable allowing for Quad I/O operations without register configuration.

Additional Features
    • Serial Interface Architecture: Nibble-wide multiplexed I/O’s with SPI-like serial command structure
    • Mode 0 and Mode 3
    • x1/x2/x4 Serial Peripheral Interface (SPI) Protocol -Burst Modes
    • Continuous linear burst, 8/16/32/64 Byte linear burst with wrap-around
    • Page-Program: 256 Bytes per page in x1 or x4 mode
    • Flexible Erase Capability: Uniform 4 KByte sectors, Four 8 KByte top and bottom parameter overlay blocks, One 32 KByte top and bottom overlay block, Uniform 64 KByte overlay blocks
    • Software Write Protection: Individual Block-Locking: 64 KByte blocks, two 32 KByte blocks, and eight 8 KByte parameter blocks
    • Low Power Consumption: Active Read current: 15 mA (typical at 104 MHz), Standby Current: 10 µA (typical)
    • SFDP (Serial Flash Discoverable Parameters)
    • Packages Available: 8-contact WSON (6mm x 5mm), 8-lead SOIC (150 mil), 8-contact USON (2mm x 3mm), 8-ball XFBGA (Z-Scale)
    • All devices are RoHS compliant
Parametrics
Name
Value
Density
8 Mbit
Op. Volt Range (V)
1.65 to 1.95
Max. Clock Freq.
104 MHz
Page Size (bytes)
256
Write Protect
Full Array
Temp Range (°C)
-40°C to +85°C
Endurance
100,000
Data Retention (Years)
100
Bus Modes
SPI,SDI,SQI

Documents

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12/19/2017
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12/12/2017
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RoHS Information

Part Number
Device Weight
Shipping Weight
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
SST26WF080B-104I/SN
0.078000
0.160000
8
SOIC
.150In(3.90mm)
Matte Tin
e3
Rohs icon
efup china icon
SST26WF080BAT-104I/SN
0.078000
0.230303
8
SOIC
.150In(3.90mm)
Matte Tin
e3
Rohs icon
efup china icon
SST26WF080BT-104I/SN
0.078000
0.230303
8
SOIC
.150In(3.90mm)
Matte Tin
e3
Rohs icon
efup china icon
SST26WF080BA-104I/SN
0.078000
0.160000
8
SOIC
.150In(3.90mm)
Matte Tin
e3
Rohs icon
efup china icon
SST26WF080B-104I/MF
0.073800
0.163265
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
Rohs icon
efup china icon
SST26WF080BA-104I/MF
0.073800
0.163265
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
Rohs icon
efup china icon
SST26WF080BT-104I/MF
0.073800
0.200000
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
Rohs icon
efup china icon
SST26WF080BAT-104I/MF
0.073800
0.200000
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
Rohs icon
efup china icon
SST26WF080BT-104I/CS
0.005000
0.050333
8
CSP
Varies
SAC
e1
Rohs icon
efup china icon
SST26WF080BAT-104I/CS
0.005000
0.050333
8
CSP
Varies
SAC
e1
Rohs icon
efup china icon
SST26WF080BT-104I/NP
0.006200
0.150000
8
UDFN
2x3x0.55mm
Matte Tin
e3
Rohs icon
efup china icon
SST26WF080BAT-104I/NP
0.006200
0.150000
8
UDFN
2x3x0.55mm
Matte Tin
e3
Rohs icon
efup china icon
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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