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TN2130

MOSFET, N-Channel Enhancement-Mode, 300V, 25 Ohm

Status: In Production

Features:

  • Free from secondary breakdown
  • Low power drive requirement
  • Ease of paralleling
  • Low CISS and fast switching speeds
  • Excellent thermal stability
  • Integral source-drain diode
  • High input impedance and high gain
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Overview
Documents
Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Additional Features
    • Free from secondary breakdown
    • Low power drive requirement
    • Ease of paralleling
    • Low CISS and fast switching speeds
    • Excellent thermal stability
    • Integral source-drain diode
    • High input impedance and high gain
Parametrics
Name
Value
BVdss min (V)
300
Rds (on) max (Ω)
25
CISSmax (pF)
50
Vgs(th) max (V)
2.4
Package
SOT-23

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (grams)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
TN2130K1-G
0.008300
0.039000
3
SOT-23
1.3mm
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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