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TC6215

N/P-Channel Enhancement-Mode Dual MOSFET

Status: In Production

Features:

  • Back to back gate-source Zener diodes
  • Guaranteed RDS(ON) at 4.0V gate drive
  • Low threshold
  • Low on-resistance
  • Independent N- and P-channels
  • Electrically isolated N- and P-channels
  • Low input capacitance
  • Fast switching speeds
  • Free from secondary breakdowns
  • Low input and output leakage
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Overview
Documents
Development Environment
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RoHS Information
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Device Overview

Summary

TC6215 consists of high voltage, low threshold N-channel and P-channel MOSFETs in an 8-Lead SOIC (TG) package. Both MOSFETs have integrated back to back gate-source Zener diode clamps and guaranteed RDS(ON) ratings down to 4.0V gate drive allowing them to be driven directly with standard 5.0V CMOS logic. These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Additional Features
    • Back to back gate-source Zener diodes
    • Guaranteed RDS(ON) at 4.0V gate drive
    • Low threshold
    • Low on-resistance
    • Independent N- and P-channels
    • Electrically isolated N- and P-channels
    • Low input capacitance
    • Fast switching speeds
    • Free from secondary breakdowns
    • Low input and output leakage
Parametrics
Name
Value
BVdss/BVdss N-Channel (V)
150
BVdss/BVdss P-Channel (V)
-150
Rds(on) N-Channel max (Ω)
4
Rds(on) P-Channel max (Ω)
7.0
Vgs(th) max (V)
2.0
Package
SOIC-8
Note
N & P-Channel pair

Documents

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (grams)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
TC6215TG-G
0.074300
0.172424
8
SOIC
3.90mm(.150in)
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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