Microchip logo
  • All
  • Products
  • Documents
  • Applications Notes
product primary image

SST12LP17E

Status: End of Life

Features:

  • Input/Output ports internally matched to 50Ω and DC decoupled
  • High gain:– Typically 28 dB gain across 2.4–2.5 GHz
  •  >24 dBm P1dB– Meets 802.11g OFDM ACPR requirement up to 21.5 dBm
  •  ~3% added EVM up to 18 dBm for 54 Mbps 802.11g signal
  •  Meets 802.11b ACPR requirement up to 22 dBm
  •  ~28%/138 mA @ POUT = 21.5 dBm for 802.11g
  •  ~33%/155 mA@POUT = 22.5 dBm for 802.11bAPPLICATIONS
  • WLAN (IEEE 802.11b/g/n)
  • Home RF
  • Cordless phones
  • 2.4 GHz ISM wireless equipment
View More
Overview
Documents
Development Environment
Similar Devices
RoHS Information
Add To Cart

Device Overview

Summary

The SST12LP17E is a 2.4 GHz fully-integrated, high-efficiency Power Amplifier module based on the highly-reliable InGaP/GaAs HBT technology and designed in compliance with IEEE 802.11b/g/n applications. It typically provides 28 dB gain with 28% power-added efficiency. The SST12LP17E has excellent linearity while meeting 802.11g spectrum mask at 21.5 dBm. The SST12LP17E also features easy board-level usage, along with high-speed power-up/-down control through a single combined reference voltage pin, and is offered in an 8-contact USON package.

Additional Features
    • Input/Output ports internally matched to 50Ω and DC decoupled
    • High gain:– Typically 28 dB gain across 2.4–2.5 GHz
    • High linear output power:
      •  >24 dBm P1dB– Meets 802.11g OFDM ACPR requirement up to 21.5 dBm
      •  ~3% added EVM up to 18 dBm for 54 Mbps 802.11g signal
      •  Meets 802.11b ACPR requirement up to 22 dBm
    • High power-added efficiency/Low operating current for both 802.11b/g/n applications
      •  ~28%/138 mA @ POUT = 21.5 dBm for 802.11g
      •  ~33%/155 mA@POUT = 22.5 dBm for 802.11bAPPLICATIONS
    Applications
    • WLAN (IEEE 802.11b/g/n)
    • Home RF
    • Cordless phones
    • 2.4 GHz ISM wireless equipment
Parametrics
Name
Value
Type
Power Ampllifier
Gain
29
Linear Power
18
Voltage min
2.75
Voltage max
4.2
Freq min
2.4
Freq max
2.4
Technology
InGaP/GaAs HBT
Application
802.11b/g/n

Documents

Jump to:

Development tools data is currently unavailable.

Similar Devices

Product
Description
Gain
Linear Power
Voltage (V)
Price 5K
High Efficiency IEEE 802.11 a/n/ac PA
26 - 29
17.5/19.5
3 - 5
$0.66
High Power IEEE 802.11 a/n PA
28-34
20
3.0 - 4.2
$0.75
High Power IEEE 802.11 b/g/n PA
34
25
3.0 - 5
$1.07
2.4 GHz High Power IEEE 802.11b/g/n/256QAM Power Amplifier
37
25
4.0 - 5.5
$0.76
50 Ohm-matched 2.4GHz FEM with PA+LNA+BT bypass
28
19
3 - 4.2
$0.68
50 Ohm Fully Matched LNA: 2.4GHz
12
 
3.0 - 4.2
$0.50
Normal Power IEEE 802.11 b/g PA
28
20.5
3.0 - 4.2
$0.34
High Gain IEEE 802.11 b/g/n PA
30
20
2.75 - 4.2
$0.32
 
30
20
3.0 - 4.2
$0.63
High Power IEEE 802.11 b/g/n PA
32
22
3.0 - 4.2
$0.65
High Power IEEE 802.11 b/g/n PA
32
22
3.0 - 4.2
$0.53

RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
SST12LP17E-XX8E
0.005500
0.064000
8
X2SON
2x2x0.4mm
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

Buy from Microchip

Grid
View
Table
View
Filter:
Apply
Clear
Only show products with samples
Product
Leads
Package Type
Temp Range
Packing Media
5K Pricing
Buy