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SST12LF02

Status: End of Life

Features:

  • Applications: -WLAN (IEEE 802.11b/g/n) Home RF; Cordless phones; -2.4 GHz ISM wireless equipment• Features: High Gain: – Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C for Transmitter (TX) chain. • High linear output power: – >24 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 4 – Meets 802.11g OFDM ACPR requirement up to 22 dBm – ~2.5% added EVM up to 18 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 22 dBm • Excellent On-chip power detection • 20 dB dynamic range on-chip power detection • Input/output ports matched to 50O internally and DC decoupled. • Packages available – 16-contact XQFN – 3mm x 3mm • All non-Pb (lead-free) devices are RoHS compliant
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Device Overview

Summary

The SST12LF02 is a 2.4 GHz Front-end Module (FEM) designed in compliance with IEEE 802.11b/g/n applications. It combines a high-performance Power Amplifier (PA) and a switch. There are three components to the FEM: the Receiver (RX) chain, the Transmitter (TX) chain, and the Bluetooth® (BT) chain. The TX chain includes a high-efficiency PA based on the InGaP/GaAs HBT technology. This chain typically provides 29 dB gain with 30% power-added efficiency (PAE) @ POUT = 22 dBm for 802.11g and 29% PAE@POUT = 22 dBm for 802.11b The TX chain has excellent linearity, typically ~2.5% added EVM at 18 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 22 dBm. The SST12LF02 also features easy board-level usage along with high-speed power-up/down controls. Ultra-low reference current (total IREF ~2 mA) makes the SST12LF02 controllable by an on/off switching signal directly from the baseband chip. These features, coupled with low operating current, make the SST12LF02 ideal for the final stage power amplification in battery-powered 802.11b/g/n WLAN transmitter applications.

Additional Features
    Applications:-WLAN (IEEE 802.11b/g/n) Home RF; Cordless phones; -2.4 GHz ISM wireless equipment
  • Features:High Gain:– Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C for Transmitter (TX) chain.
  • High linear output power:– >24 dBm P1dB- Please refer to “Absolute Maximum StressRatings” on page 4– Meets 802.11g OFDM ACPR requirement up to22 dBm– ~2.5% added EVM up to 18 dBm for 54 Mbps 802.11g signal– Meets 802.11b ACPR requirement up to 22 dBm
  • Excellent On-chip power detection
  • 20 dB dynamic range on-chip power detection
  • Input/output ports matched to 50O internally and DC decoupled.
  • Packages available– 16-contact XQFN – 3mm x 3mm
  • All non-Pb (lead-free) devices are RoHS compliant
Parametrics
Name
Value
Type
Front-End Module
Gain
29
Linear Power
18.5
Voltage min
3.0
Voltage max
4.2
Freq min
2.4
Freq max
2.4
Technology
GaAs PHEMT/HBT
Application
802.11b/g/n

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