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MIC5019

Status: In Production

Features:

  • 4-pin 1.2mm x 1.2mm Thin QFN Package
  • +2.7V to +9V supply voltage range
  • 16V gate drive at VDD = 9V
  • 8V gate drive at VDD = 2.7V
  • Operates in low and high side configurations
  • 150µA (typical) supply current at VDD = 5V
  • <1µA shutdown supply current
  • -40°C to +125°C Junction Temperature Range
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Overview
Documents
Development Environment
RoHS Information
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Device Overview

Summary

The MIC5019 is a high-side MOSFET driver with integrated charge pump designed to switch an N-Channel enhancement type MOSFET control signal in high-side or low-side applications.

The MIC5019 operates from a 2.7V to 9V supply, and generates gate voltages of 9.2V from a 3V supply, and 16V from a 9V supply. The device consumes a low 77µA of supply current and less than 1µA of supply current in shutdown mode.

In high side configurations, the source voltage of the MOSFET approaches the supply voltage when switched on. To keep the MOSFET turned on, the MIC5019's output drives the MOSFET gate voltage higher than the supply voltage.

The MIC5019 is available in an ultra-small 4-pin 1.2mm x 1.2mm Thin QFN Package and is rated for -40°C to +125°C junction temperature range.

Additional Features
    • 4-pin 1.2mm x 1.2mm Thin QFN Package
    • +2.7V to +9V supply voltage range
    • 16V gate drive at VDD = 9V
    • 8V gate drive at VDD = 2.7V
    • Operates in low and high side configurations
    • 150µA (typical) supply current at VDD = 5V
    • <1µA shutdown supply current
    • -40°C to +125°C Junction Temperature Range
Parametrics
Name
Value
MOSFET Driver Type
High Side
Driver Type
High-Side or Low Side Single
Configuration
Non-Inverting
Peak Output Current (source/sink, A)
10uA*
Output Resistance (source/sink, Ω)
n/a
Maximum Supply Voltage (V)
9
Propagation Delay (Td1/Td2, ns)
n/a
Rise/Fall Time (Tr/Tf, ns)
440us/5.56us
Capacitive Load Drive
3,000pF in 1.34 ms
Features
Ultra Small 1.2mm x 1.2mm DFN

Documents

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Data Sheet

11/05/2015
380KB

Development Environment

  • Demo & Evaluation Boards
Demo & Evaluation Boards
MIC5019YFT Evaluation Board
MIC5019YFT Evaluation Board ( MIC5019YFT-EV )

The MIC5019 is a high-side MOSFET driver with integrated charge pump designed to switch an Nchannel enhancement type MOSFET in high-side or low–side applications. The MIC5019 operates from a 2.7V to 9V supply. It generates gate voltages of 9.2V from a 3V supply and 16V from a 9V supply. The device consumes a low 77μA of supply current and less than 1μA of supply current in shutdown mode.

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
MIC5019YFT-TR
0.002400
0.709750
4
UDFN
1.2x1.2x0.6mm
NiPDAu
e4
MIC5019YFT-T5
0.002400
0.709750
4
UDFN
1.2x1.2x0.6mm
NiPDAu
e4
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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