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MIC5013

Protected High or Low Side MOSFET Driver

Status: In Production

Features:

  • +7.0V to +32V operation
  • Less than 1µA current in the "off" state
  • Internal charge pump to drive the gate of an N-channel power FET above supply
  • Available in small outline SOIC packages
  • Internal zener clamp for gate protection
  • 60µs typical turn-on time to 50% gate overdrive
  • Programmable over-current sensing
  • Dynamic current threshold for high in-rush loads
  • Fault output pin indicates current faults
  • Implements high- or low-side switches
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Overview
Documents
Development Environment
RoHS Information
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Device Overview

Summary

The MIC5013 is an 8-pin MOSFET driver with over-current shutdown and a fault flag. It is designed to drive the gate of an N-channel power MOSFET above the supply rail high-side power switch applications. The MIC5013 is compatible with standard or current-sensing power MOSFETs in both high- and low-side driver topologies.

The MIC5013 charges a 1nF load in 60µs typical and protects the MOSFET from over-current conditions. The current sense trip point is fully programmable and a dynamic threshold allows high in-rush current loads to be started. A fault pin indicates when the MIC5013 has turned off the FET due to excessive current.

Other members of the driver family include the MIC5011 minimum parts count driver and MIC5012 dual driver.

Additional Features
    • +7.0V to +32V operation
    • Less than 1µA current in the "off" state
    • Internal charge pump to drive the gate of an N-channel power FET above supply
    • Available in small outline SOIC packages
    • Internal zener clamp for gate protection
    • 60µs typical turn-on time to 50% gate overdrive
    • Programmable over-current sensing
    • Dynamic current threshold for high in-rush loads
    • Fault output pin indicates current faults
    • Implements high- or low-side switches
Parametrics
Name
Value
MOSFET Driver Type
High Side
Driver Type
High-Side or Low Side Single
Configuration
Non-Inverting
Peak Output Current (source/sink, A)
225uA*
Output Resistance (source/sink, Ω)
n/a
Maximum Supply Voltage (V)
32
Propagation Delay (Td1/Td2, ns)
n/a
Rise/Fall Time (Tr/Tf, ns)
60us/4us
Capacitive Load Drive
1000 pF in 60µs
Features
with over-current shutdown and a fault flag

Documents

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Data Sheets

  
226KB

Development tools data is currently unavailable.

RoHS Information

Part Number
Device Weight (g)
Shipping Weight (grams)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
MIC5013YM
0.075000
0.163265
8
SOIC
3.90mm(.150in)
NiPdAu
e4
MIC5013YM-TR
0.075000
0.250000
8
SOIC
3.90mm(.150in)
NiPdAu
e4
MIC5013YN
0.486700
0.900000
8
PDIP
.300in
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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