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TC7920

Two Pair, N/P Channel Enhancement-Mode MOSFET w/ Drain Diodes

Status: In Production

Features:

  • High voltage Vertical DMOS technology
  • Integrated drain output high voltage diodes
  • Integrated gate-to-source resistor
  • Integrated gate-to-source Zener diode
  • Low threshold, Low on-resistance
  • Low input & output capacitance
  • Fast switching speeds
  • Electrically isolated N- and P-MOSFET pairs
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Overview
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Development Environment
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RoHS Information
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Device Overview

Summary

TC7920 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package. All MOSFETs have integrated the output drain high voltage diodes, gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high voltage pulser applications. The complimentary, high-speed, high voltage, gate-clamped N and P-channel MOSFET pairs utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input and output capacitance, and fast switching speeds are desired.

Additional Features
    • High voltage Vertical DMOS technology
    • Integrated drain output high voltage diodes
    • Integrated gate-to-source resistor
    • Integrated gate-to-source Zener diode
    • Low threshold, Low on-resistance
    • Low input & output capacitance
    • Fast switching speeds
    • Electrically isolated N- and P-MOSFET pairs
Parametrics
Name
Value
BVdss/BVdss N-Channel (V)
200
BVdss/BVdss P-Channel (V)
-200
Rds(on) N-Channel max (Ω)
7
Rds(on) P-Channel max (Ω)
8.0
Vgs(th) max (V)
2.0
Package
DFN-12
Note
Two N & P-Channel Pairs

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (grams)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
TC7920K6-G
0.041400
0.139394
12
VDFN
4x4x1.0mm
NiPdAu
e4
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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