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Silicon Carbide mSiC™ Gate Drivers

Silicon Carbide (SiC) and IGBT Gate Driver Solutions


Our configurable mSiC™ gate drivers reduce switching losses and improve system power density, providing a superior solution compared to standard analog MOSFET drivers. Incorporating patented Augmented Switching™ technology and robust short-circuit protection, these digital gate drivers are fully software configurable and prevent false faults and mitigate ringing, Electromagnetic Interference (EMI), overshoot and undershoot in SiC and IGBT power modules. Our fully configurable mSiC gate drivers boost the efficiency and performance of SiC and IGBT power modules by using configurable switching profiles to optimize switching efficiency and device characteristics to meet application requirements.

Why Choose Our mSiC Gate Driver Solutions?


Our fully configurable mSiC gate drivers boost the efficiency and performance of SiC and IGBT power modules by using configurable switching profiles to optimize switching efficiency and device characteristics to meet application requirements. Patented Augmented Switching technology increases robustness and short-circuit protection, prevents false faults, mitigates ringing, reduces Electromagnetic Interference (EMI) and over- and undershoot in SiC and IGBT power modules.

Resources        


SiC Documentation

SiC Design Resources

Accelerate your development journey with our industry-leading hardware and software tools, models, simulations and extensive documentation supporting mSiC products.

SiC Reference Designs

Reference Designs and Development Tools

Explore our comprehensive selection of time-saving SiC reference designs and development tools.

SiC Models and Simulation

SPICE and PLECS Models

Accurate simulation tools for designing, analyzing and optimizing SiC power devices and systems to predict performance, evaluate thermal behavior and streamline development before hardware testing.

MPLAB® SiC Power Simulator

MPLAB® SiC Power Simulator

Evaluate device performance quickly by calculating power losses and thermal performance under different conditions for mSiC solutions using lab testing data for common power converter topologies.

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