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Gate Drivers for Power MOSFETs and IGBTs

Comprehensive Gate Driver Configurations to Support Your Next Application Design


A gate driver is a type of power amplifier that accepts a low-power input from a controller IC and produces a high-current drive input for the gate of a high-power transistor such as an Insulated-Gate Bipolar Transistor (IGBT) or power MOSFET. Gate drivers are beneficial to MOSFET operation because the high-current drive provided to the MOSFET gate decreases the switching time between the gate ON/OFF stages, which leads to increased MOSFET power and thermal efficiency.

Our diverse array of gate drivers supports applications ranging from DC/DC power supplies to a host of motor applications while promoting high design flexibility, system efficiency and robust operation.

Fast and Safe Switching With Our 600V Gate Drivers

Our 600V, versatile gate drivers are an excellent choice for a wide variety of applications, including stepper motors, compressors, pump motors, motor drives for small low-current motors, DC-DC converters, industrial inverters and renewable energy systems.

Gate Drivers FAQs


What is the purpose of the gate driver?

A gate driver is used to control the switching of power transistors such as MOSFETs and IGBTs. Its main purpose is to take a low-power control signal from a microcontroller or controller IC and provide the higher current and voltage needed to turn the power transistor on and off quickly and efficiently. Fast switching reduces power loss, improves thermal performance and helps increase overall system efficiency.

Gate drivers are commonly used in applications such as motor drives, power supplies, DC-DC converters, inverters and renewable energy systems. They also provide important features such as level shifting, isolation, dead-time control and protection against faults like shoot-through or undervoltage conditions.

What are some of the most common gate driver output types?

There are several types of gate drivers, each designed for specific power-conversion and motor-control applications. The main categories are based on how they drive the power transistors and the system architecture they support.

  • Low-side gate drivers
    • Drive a MOSFET or Insulated-Gate Bipolar Transistor (IGBT) connected between the load and ground
    • Simpler and commonly used in DC-DC converters and switching supplies
  • High-side gate drivers
    • Drive transistors connected between the power supply and the load
    • Require level shifting or bootstrap circuitry because the source/emitter voltage moves with the switching node
  • Half-bridge gate drivers
    • Combine one high-side and one low-side driver
    • Commonly used in motor phases, synchronous buck converters and inverters
  • Full-bridge gate drivers
    • Control four switching transistors arranged in an H-bridge
    • Used for bidirectional motor control and power conversion
  • Three-phase gate drivers
    • Designed for Brushless DC (BLDC) and Permanent Magnet Synchronous Motor (PMSM) control
    • Typically contain three half-bridge drivers to control six external MOSFETs
  • Isolated gate drivers
    • Provide galvanic isolation between control and power stages
    • Improve safety and noise immunity in high-voltage systems
  • Smart gate drivers
    • Include diagnostics and protection features such as overcurrent detection, thermal shutdown, dead-time insertion, and fault reporting
  • MOSFET vs. IGBT gate drivers
    • Optimized for the switching and voltage requirements of either MOSFETs or IGBTs

How do I select the right gate driver for my MOSFET or IGBT? 

There are many MOSFET technologies and silicon processes in existence today, with new advances being made every day. To make a generalized statement about matching a MOSFET driver to a MOSFET based on voltage/current ratings or die sizes is very difficult, if not impossible.

As with any design decision, there are multiple variables involved when selecting the proper MOSFET driver for the MOSFET being used in your design. Parameters such as input-to-output propagation delay, quiescent current, latch-up immunity and driver current rating must all be taken into account. The driver’s power dissipation will also affect your packaging decision and driver selection.

Application note is available: Matching MOSFET Drivers to MOSFETs

This application note discusses the details of MOSFET driver power dissipation in relation to MOSFET gate charge and operating frequency. It also discusses how to match MOSFET driver current drive capability and MOSFET gate charge based on desired turn-on and turn-off times of the MOSFET.

What causes ringing, overshoot or false turn-on in MOSFET gates?

Ringing, overshoot, and false turn-on in MOSFET gates are usually caused by parasitic inductance, capacitance and very fast switching transitions in the power circuit. These effects become more severe at higher voltages, currents and switching speeds.

Common causes include:

  • Parasitic inductance in PCB traces
    • Long gate-drive traces and power loops create inductance
    • During fast switching, this inductance generates voltage spikes and oscillations
  • Miller effect (gate-drain capacitance, Cgd)
    • Rapid voltage changes at the drain couple through the Miller capacitance into the gate
    • This can unintentionally raise the gate voltage and cause false turn-on
  • Excessively fast switching edges
    • Very high dV/dt and dI/dt transitions can create ringing and EMI
    • Faster switching improves efficiency but increases noise sensitivity
  • Poor PCB layout
    • Large loop areas, weak grounding and poor decoupling increase parasitic effects
    • High-current switching paths placed near gate signals can inject noise
  • Inadequate gate resistance
    • Gate resistors that are too small may allow excessive ringing
    • Proper resistor sizing helps damp oscillations
  • Insufficient decoupling capacitors
    • Poor local bypassing near the gate driver can cause supply bounce and instability
  • Shared source inductance
    • Voltage spikes on the MOSFET source terminal can interfere with gate drive timing and effective Vgs
  • High-side driver bootstrap issues
    • Noise on the switch node or bootstrap supply can create unstable gate-drive behavior

Engineers commonly reduce these issues by: 

  • Adding or tuning gate resistors
  • Improving PCB layout and shortening loops
  • Using Kelvin source connections
  • Adding snubbers or ferrite beads
  • Using stronger or isolated gate drivers
  • Controlling switching speed intentionally

Application notes available:

What are the most common applications for gate drivers?

Gate drivers are commonly used anywhere a controller needs to switch a power MOSFET, IGBT, or similar transistor quickly and efficiently.

Typical applications include:

  • DC-DC converters
    • Buck, boost, synchronous buck, full-bridge and other switching power supplies
  • Motor drives
    • BLDC, PMSM, stepper motors, pump motors, compressor drives, and small industrial motors
  • Inverters
    • Industrial inverters and power-conversion stages
  • Renewable energy systems
    • Solar power conversion and related high-power switching systems
  • Power supplies
    • High-speed or high-power designs where efficient transistor switching matters
  • Data center power management
    • Power conversion/distribution systems that rely on efficient switching stages

In general, gate drivers are used to:

  • Translate low-power control signals into high-current gate pulses
  • Reduce transistor switching losses
  • Improve thermal efficiency
  • Provide robust drive for high-side/low-side or bridge configurations

What are the pros and cons of using discrete drivers vs. integrated gate drivers?

For gate drivers, specifically, the tradeoff is similar to motor drivers, but more focused on the power-switch interface rather than the whole motor control system.

  • Integrated gate drivers are better when you want simpler design, fewer parts, built-in protection/features and faster development
  • Discrete driver approaches are better when you want more control over topology, power stage behavior, isolation strategy and performance tuning

Integrated Gate Drivers

These usually combine multiple gate-drive-related functions in one device or module, such as:

  • High-side/low-side drive stages
  • Dead-time control
  • Shoot-through prevention
  • UVLO/protection
  • Sometimes current sense amplifiers, regulators or fault handling

Pros

  • Lower component count
    • Reduces external circuitry and BoM complexity
  • Simpler design
    • Easier schematic capture, layout, bring-up and validation
  • Smaller PCB area
    • Helpful in compact power designs
  • Built-in features
    • Often includes anti-shoot-through, adaptive dead-time, enable pins, UVLO, overcurrent-related support or integrated bias/power functions depending on device type
  • Faster time to market
    • Less effort spent stitching together separate driver blocks
  • Potentially better matched timing internally
    • Internal high-side/low-side paths may be optimized together

Cons

  • Less flexibility
    • You are limited to the architecture and feature set of the selected IC/module
  • May include unneeded features
    • Can increase cost or constrain usage.
  • Thermal/function concentration
    • More functionality in one package can complicate thermal management or fault isolation
  • Harder to customize switching behavior deeply
    • Especially compared with advanced discrete or configurable gate-drive solutions

Discrete Gate Driver Approaches

  • This means building the drive function from more separate elements—for example:
    • Standalone MOSFET driver ICs
    • Separate bootstrap/isolated supply choices
    • External dead-time/protection implementation
    • Separate power switches and sensing/protection circuits

Pros

  • Maximum flexibility
    • You can choose exactly the driver strength, topology, timing scheme, voltage range and supporting circuitry needed
  • Better optimization of switching performance
    • Useful for tuning rise/fall times, EMI behavior, ringing control, dead time and efficiency
  • Scales well across applications
    • Especially useful from simple low-side drives up to high-voltage MOSFET/IGBT stages
  • Easier architectural customization
    • Good when you need special isolation arrangements, negative gate biasing, desat protection schemes or custom fault responses
  • Heat/functions distributed across the board
    • Rather than concentrating everything in one package

Cons

  • Higher design complexity
    • More decisions around timing, layout parasitics, supply rails, protection coordination and noise immunity
  • More external components
    • Larger BoM and more routing effort
  • Longer development/debug cycle
    • More opportunities for interaction issues between blocks
  • Potentially larger PCB footprint
    • Particularly if protections and support circuits are external

When should isolated gate drivers be used?

Use an isolated gate driver when the gate-drive circuit must be galvanically separated from the controller or low-voltage logic.

Common cases:

  • High-side switching where the transistor source/emitter is not at ground potential
  • Offline/high-voltage systems for safety and protection
  • Half-bridge, full-bridge, inverter, motor drive and DC/DC converter topologies
  • Designs using IGBTs or SiC MOSFETs, which often need isolated bias rails and strong noise immunity
  • Systems with large common-mode transients, where isolation helps prevent false triggering and protects control electronics
  • When you need to break ground loops or separate noisy power grounds from sensitive digital/control grounds

You may not need an isolated gate driver when:

  • The switch is low-side referenced to the same ground as the controller
  • A non-isolated driver can meet voltage, timing and noise requirements
  • Isolation is already provided elsewhere in the architecture

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