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Overview
The EV39N46A module gate driver evaluation board is designed to facilitate the evaluation of Si, IGBT and mSiC™ MOSFETs and modules, offering superior performance in high-power and high-frequency applications. This board features a 2W isolated power supply for driving larger MOSFETs, enhanced EMI immunity through a common-mode choke and the capability to drive 700V and 1200V devices with a 10A peak output current. It supports seamless microcontroller interfacing with +3.3V / +5V CMOS/TTL logic on PWM pins, includes desaturation protection and independent under-voltage lockout (UVLO) for safety, and allows for optimized switching with separate gate resistors. Additionally, it provides status and fault indications, making it a comprehensive tool for evaluating and optimizing device performance.
Electrical Characteristics
- Input Supply Voltage: 13-17V (Typical: 15V)
- Default Output Voltage (VGS): +20V / -5V
- Alternative Output Voltage Configurations: +18V / -5V, +15V / -5V
- Working Isolation Voltage: 3000V
- Output Gate Resistor (RG): 0.5 ohm
Maximum Parameters
- Input Supply Voltage (VIN): 15V
- Output Peak Current (IPK): ±10A
- Output Power per Channel (PDRIVE): 2W
- Maximum Switching Frequency (FMAX): 100 kHz
- Ambient Operating Temperature (TA): -40 to 85 °C
Applications
- DC-DC Converters
- Uninterruptible Power Supplies (UPS)
- Industrial (DC-AC) Inverters
- The 2W isolated power supply enables driving larger MOSFETs at higher frequencies.
- Designed to drive 700V and 1200V mSiC™ MOSFETs and modules with a 10A peak source and sink output current.
- Features desaturation protection circuitry, active Miller clamp and independent under-voltage lockout (UVLO) to safeguard the system
- Separate gate turn-on and turn-off resistors allow users to optimize switching turn-on and turn-off slopes
- Enhanced electromagnetic interference (EMI) immunity
1x Single-Channel SiC Module Gate Driver Evaluation Board
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