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To meet the needs of military-grade and industrial products, we provide a broad selection of traditional parallel EEPROM devices. Our practice of customer-driven obsolesce enables the creation of longstanding-designs for a broad spectrum of products, including telecommunications, avionics and military applications, without the risk of forced redesign from supply limitations. To meet the demands of both industrial (−40°C to 85°C) and military-grade (−55°C to 125°C) temperature applications, our parallel EEPROM devices are offered in a broad selection of densities (64 Kbit to 1 Mbit) and package options.

Why Design with Our Parallel EEPROMs?


  • Battery-voltage (2.7V), low-voltage (3V) and 5V devices
  • Industrial-grade device RoHS-compliant: PLCC, SOIC, PDIP and TSOP
  • Military-grade ceramic hermetic packaging dual marked with Standard Microcircuit Drawings (SMD) part numbers
  • MIL-STD-883 testing
  • Internal Error Correction Circuit
  • Optional software data protection mechanism
  • Extra bits for device identification

Military-Grade Parallel EEPROMs


Device Standard Military Drawing (SMD) Description
AT28C256 5962-88525 03/06/11/14 Paged Parallel EEPROM 256K (32K x 8) – Military Grade
AT28C256E 5962-88525 05/08/13/16 High-Endurance Parallel EEPROM 256K (32K x 8) – Military Grade
AT28C256F 5962-88525 07/15 Fast Write Parallel EEPROM 256K (32K x 8) – Military Grade
AT28HC256 5962-88634 01/03 High-Speed Parallel EEPROM 256K (32K x 8) – Military Grade
AT28HC256E No SMD High-Endurance Parallel EEPROM 256K (32K x 8) – Military Grade
AT28HC256F 5962-88634 02/04 Fast Write Parallel EEPROM 256K (32K x 8) – Military Grade
AT28C010 5962-38267 01/03/05/07 Paged Parallel EEPROM 1M (128K x 8) – Military Grade
AT28C010E No SMD High-Endurance Parallel EEPROM 1M (128K x 8) – Military Grade

Industrial-Grade Parallel EEPROMs


Device Description
AT28BV256 Battery-Voltage Parallel EEPROM 256K (32K x 8)
AT28BV64B Battery-Voltage Parallel EEPROM 64K (8K x 8) with Page Write and Software Data Protection
AT28C010 Paged Parallel EEPROM 1M (128K x 8)
AT28C256 Paged Parallel EEPROM 256K (32K x 8)
AT28C64B Parallel EEPROM 64K (8K x 8) with Page Write and Software Data Protection
AT28HC256 High-Speed Parallel EEPROM 256K (32K x 8)
AT28HC64B High-Speed Parallel EEPROM 64K (8K x 8) with Page Write and Software Data Protection
AT28HC64BF High-Speed Parallel EEPROM 64K (8K x 8) with Page Write and Software Data Protection
AT28LV010 Low-Voltage 1M (128K x 8) Parallel EEPROM

EEPROMs Market Value Explained

Webinar on EEPROM memory cell structure and the values this structure offers over NOR Flash.

http://www.microchip.com/design-centers/memory/serial-eeprom

Memory Product Comparison


  Serial
EEPROM
Parallel
EEPROM
OTP
EPROM
Serial
Flash
Parallel
Flash
Serial
SRAM
Serial
NVSRAM
Serial
EERAM
  Explore Products Explore Products Explore Products Explore Products Explore Products Explore Products  Explore Products Explore Products
Density 128 bit - 4 Mb 64 Kb - 1 Mb 256 Kb - 8 Mb 512 Kb - 64 Mb 1 - 64 Mb 64 Kb - 1 Mb 512 Kb - 1 Mb 4 Kb - 1 Mb
Clock Frequency 0.4 - 20 MHz 70 ns 45 ns 20 - 104 MHz 55-70 ns 16 - 20 MHz 16 - 20 MHz 1 - 66 MHz
Cost/Bit High High High Low Low Medium Medium Medium
Read Times Medium Fast Fast Medium Fast Medium Medium Medium
Write Times Medium Fast N/A Medium Fast Instantaneous Instantaneous Instantaneous
Pin Count 2 to 8 pins 28 and 32 pins 28 to 44 pins 8 pins 32 and 48 pins 8 pins 8 pins 8 pins
Data Retention 200+ Years 10 Years 10 Years 100+ Years 100+ Years Volatile 20+ Years
(with battery)
100+ Years
Typ. Standby Current 1 µA 200 µA 100 µA ~15 µA ~30 µA ~4 µA ~4 µA ~40 µA
Voltage 1.7 V - 5.5V 2.7V,
5V
2.7V,
5V
1.65V - 1.95V,
2.7V - 3.6V,
2.3V - 3.6V
1.65V - 1.95V,
2.7V - 3.6V,
4.5V - 5.5V
1.65V - 1.95V,
2.5V - 5.5V
2.5V - 5.5V 2.7V - 3.6V,
4.5V - 5.5V
Temperature -55°C to +150°C 1 -55°C to +125°C -40°C to +85°C -40°C to +125°C 1 -40°C to +85°C -40°C to +125°C -40°C to +85°C -40°C to +125°C 1

1. Selected densities