The SST38VF6401B/6402B/6403B/6404B are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) devices manufactured with SST proprietary,high-performance CMOS Super- Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401B/6402B/6403B/6404B write (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pin assignments for x16 memories.

Please see the Silicon Errata for this device SST38VF640XB Errata

Please consider this device SST38VF6401

• Organized as 4M x16
• Single Voltage Read and Write Operations– 2.7-3.6V
• Superior Reliability– Endurance: 100,000 Cycles minimum– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)– Active Current: 25 mA (typical)– Standby Current: 5 µA (typical)– Auto Low Power Mode: 5 µA (typical)
• 128-bit Unique ID
• Security-ID Feature– 248 Word, user One-Time-Programmable
• Protection and Security Features– Hardware Boot Block Protection/WP# Input Pin, Uniform(32 KWord) and Non-Uniform (8 KWord) optionsavailable– User-controlled individual block (32 KWord) protection,using software only methods– Password protection
• Hardware Reset Pin (RST#)
• Fast Read and Page Read Access Times:– 70 ns Read access time– 25 ns Page Read access times- 8-Word Page Read buffer
• Latched Address and Data
• Fast Erase Times:– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)
• Erase-Suspend/-Resume Capabilities
• Fast Word and Write-Buffer Programming Times:– Word-Program Time: 7 µs (typical)– Write Buffer Programming Time: 1.75 µs / Word (typical)- 16-Word Write Buffer
• Automatic Write Timing– Internal VPP Generation
• End-of-Write Detection– Toggle Bits– Data# Polling– RY/BY# Output
• CMOS I/O Compatibility
• JEDEC Standard– Flash EEPROM Pinouts and command sets
• CFI Compliant
• Packages Available– 48-lead TSOP– 48-ball TFBGA
• All non-Pb (lead-free) devices are RoHS compliant