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SY10EP05V

Status: In Production

Features:

  • 3.3V or 5V power supply options
  • 180ps typical propagation delay
  • Maximum frequency >3GHz typical
  • Internal input resistors: pulldown on D, pulldown and pullup on /D
  • Q output will default LOW with inputs open or at VEE
  • Transistor count: 126
  • Available in 8-pin MSOP and SOIC packages
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Overview
Documents
Development Environment
RoHS Information
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Device Overview

Summary

The SY10EP05V is a 2-input differential AND/NAND gate. The device is functionally equivalent to the EL05 device. With AC performance much faster that the EL05 device, the EP05V is ideal for applications requiring the fastest AC performance available.

Additional Features
    • 3.3V or 5V power supply options
    • 180ps typical propagation delay
    • Maximum frequency >3GHz typical
    • Internal input resistors: pulldown on D, pulldown and pullup on /D
    • Q output will default LOW with inputs open or at VEE
    • Transistor count: 126
    • Available in 8-pin MSOP and SOIC packages
Parametrics
Name
Value
Product Type
And/Nand Gate
Description
2-Input Diff And/Nand Gate
Input
ECL
Supply Voltage
3.3/5
Max Prop Delay (ps)
180
OE
False
RPE
False
FSI
False
Input Mux
False
Input EQ
False
Output Type
ECL

Documents

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Data Sheets


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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (grams)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
SY10EP05VZG-TR
0.075000
0.250000
8
SOIC
3.90mm(.150in)
NiPdAu
e4
SY10EP05VZG
0.075000
0.163265
8
SOIC
3.90mm(.150in)
NiPdAu
e4
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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