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SST38VF6404B

Status: Not Recommended for new designs

Features:

  • Organized as 4M x16
  • Single Voltage Read and Write Operations– 2.7-3.6V
  • Superior Reliability– Endurance: 100,000 Cycles minimum– Greater than 100 years Data Retention
  • Low Power Consumption (typical values at 5 MHz)– Active Current: 25 mA (typical)– Standby Current: 5 µA (typical)– Auto Low Power Mode: 5 µA (typical)
  • 128-bit Unique ID
  • Security-ID Feature– 248 Word, user One-Time-Programmable
  • Protection and Security Features– Hardware Boot Block Protection/WP# Input Pin, Uniform(32 KWord) and Non-Uniform (8 KWord) optionsavailable– User-controlled individual block (32 KWord) protection,using software only methods– Password protection
  • Hardware Reset Pin (RST#)
  • Fast Read and Page Read Access Times:– 70 ns Read access time– 25 ns Page Read access times- 8-Word Page Read buffer
  • Latched Address and Data
  • Fast Erase Times:– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)
  • Erase-Suspend/-Resume Capabilities
  • Fast Word and Write-Buffer Programming Times:– Word-Program Time: 7 µs (typical)– Write Buffer Programming Time: 1.75 µs / Word (typical)- 16-Word Write Buffer
  • Automatic Write Timing– Internal VPP Generation
  • End-of-Write Detection– Toggle Bits– Data# Polling– RY/BY# Output
  • CMOS I/O Compatibility
  • JEDEC Standard– Flash EEPROM Pinouts and command sets
  • CFI Compliant
  • Packages Available– 48-lead TSOP– 48-ball TFBGA
  • All non-Pb (lead-free) devices are RoHS compliant
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Overview
Documents
Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

The SST38VF6401B/6402B/6403B/6404B are 4M x16 CMOS Advanced Multi- Purpose Flash Plus (Advanced MPF+) devices manufactured with SST proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401B/6402B/6403B/6404B write (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pin assignments for x16 memories.

Please see the Silicon Errata for this device SST38VF640XB Errata

Please consider this device SST38VF6404

Additional Features
      Features
    • Organized as 4M x16
    • Single Voltage Read and Write Operations– 2.7-3.6V
    • Superior Reliability– Endurance: 100,000 Cycles minimum– Greater than 100 years Data Retention
    • Low Power Consumption (typical values at 5 MHz)– Active Current: 25 mA (typical)– Standby Current: 5 µA (typical)– Auto Low Power Mode: 5 µA (typical)
    • 128-bit Unique ID
    • Security-ID Feature– 248 Word, user One-Time-Programmable
    • Protection and Security Features– Hardware Boot Block Protection/WP# Input Pin, Uniform(32 KWord) and Non-Uniform (8 KWord) optionsavailable– User-controlled individual block (32 KWord) protection,using software only methods– Password protection
    • Hardware Reset Pin (RST#)
    • Fast Read and Page Read Access Times:– 70 ns Read access time– 25 ns Page Read access times- 8-Word Page Read buffer
    • Latched Address and Data
    • Fast Erase Times:– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)
    • Erase-Suspend/-Resume Capabilities
    • Fast Word and Write-Buffer Programming Times:– Word-Program Time: 7 µs (typical)– Write Buffer Programming Time: 1.75 µs / Word (typical)- 16-Word Write Buffer
    • Automatic Write Timing– Internal VPP Generation
    • End-of-Write Detection– Toggle Bits– Data# Polling– RY/BY# Output
    • CMOS I/O Compatibility
    • JEDEC Standard– Flash EEPROM Pinouts and command sets
    • CFI Compliant
    • Packages Available– 48-lead TSOP– 48-ball TFBGA
    • All non-Pb (lead-free) devices are RoHS compliant
Parametrics
Name
Value
Density
64 Mbit
Op. Volt Range (V)
2.7 to 3.6
Read Access Time
70 ns
Page Size (bytes)
16
Temp Range (°C)
-40°C to +85°C
Endurance
100K min

Documents

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (grams)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
SST38VF6404B-70I/CD
0.094100
0.666667
48
TFBGA
6x8x1.2mm
SAC
e1
SST38VF6404BT-70I/CD
0.094100
0.336000
48
TFBGA
6x8x1.2mm
SAC
e1
SST38VF6404B-70I/TV
0.564500
2.770833
48
TSOP
12x20mm
Matte Tin
e3
SST38VF6404BT-70I/TV
0.564500
0.940000
48
TSOP
12x20mm
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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