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SST25WF080B

8 Mbit 1.65 - 1.95V SPI Serial Flash

Status: In Production

Features:

  • Serial Peripheral Interface (SPI) Architecture Mode 0 and Mode 3
  • High Speed Clock Frequency up to 40MHz
  • Dual Input/Output Support
  • Superior Reliability Endurance of 100,000 Cycles with greater than 20 years Data Retention
  • Automotive AEC-Q100 Qualified Grade 1 and 3
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Overview
Documents
Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

SST25WF080B is a member of the Serial Flash 25 Series family and feature a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. SPI serial flash memory is manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

This Serial Flash significantly improve performance and reliability, while lowering power consumption. The device writes (Program or Erase) with a single power supply of 1.65-1.95V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.

Additional Features
  • Single Voltage Read and Write Operations - 1.65-1.95V
  • Serial Peripheral Interface (SPI) Architecture Mode 0 and Mode 3
  • High Speed Clock Frequency up to 40MHz
  • Dual Input/Output Support
  • Superior Reliability Endurance of 100,000 Cycles with greater than 20 years Data Retention
  • Ultra-Low Power Consumption:   - Active Read Current: 4 mA (typical)   - Standby Current: 10 μA (typical)   - Power-down Mode Standby Current: 4 μA (typical)
  • Flexible Erase Capability   - Uniform 4 KByte sectors   - Uniform 64 KByte overlay blocks
  • Page Program Mode up to 256 Bytes/Page
  • Fast Erase and Page-Program:   - Chip-Erase Time: 500 ms (typical)   - Sector-Erase Time: 40 ms (typical)   - Block-Erase Time: 80 ms (typical)   - Page-Program Time: 0.8 ms/ 256 bytes (typical)
  • End-of-Write Detection with Software polling the BUSY bit in Status Register
  • Hold Pin (HOLD#) to Suspend a serial sequence without deselecting the device
  • Write Protection Pin (WP#) - Enables/Disables the Lock-Down function of the status register
  • Software Write Protection- Write protection through Block-Protection bits in status register
  • Temperature Range: Industrial -40°C to +85°C, Extended -40°C to +125°C
  • Automotive AEC-Q100 Qualified Grade 1 and 3
  • Packages Available: 8-lead SOIC (150 mils), 8-contact USON (2mm x 3mm), WLCSP
  • All devices are RoHS compliant
Parametrics
Name
Value
Density
8 Mbit
Op. Volt Range (V)
1.65 to 1.95
Max. Clock Freq.
40 MHz
Page Size (bytes)
256
Temp Range (°C)
-40°C to +125°C
Endurance
100,000
Data Retention (Years)
20
Bus Modes
SPI

Documents

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Data Sheets

Brochures

12/19/2017
3698KB

Code Examples

Software Libraries/Firmware

06/23/2015
67KB
06/24/2015
72KB

Development Environment

  • Demo & Evaluation Boards
  • Code Examples
Demo & Evaluation Boards
Serial SuperFlash(R) Kit 2
Serial SuperFlash(R) Kit 2 ( AC243008 )

The Serial SuperFlash® Kit 2 allows evaluation of Microchip's Serial Flash Devices which are made using the SST SuperFlash® technology. The Serial SuperFlash Kit 2 contains three Serial Flash Daughter Boards. The Serial Flash Daughter Board is an evaluation board designed to interface with the mikroBUS™ connector on the Explorer 16/32 Development Board...

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (grams)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
SST25WF080BT-40I/CS
0.064667
9
WLCSP
Varies
SAC
e1
SST25WF080B-40E/SN
0.078000
0.250000
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25WF080B-40I/SN
0.078000
0.250000
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25WF080BT-40E/SN
0.078000
0.230303
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25WF080BT-40I/SN
0.078000
0.230303
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25WF080BT-40E/SN13GVAO
0.078000
0.230303
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25WF080B-40E/SN13GVAO
0.078000
0.250000
8
SOIC
.150In(3.90mm)
Matte Tin
e3
SST25WF080BT-40I/NP
0.006200
0.150000
8
UDFN
2x3x0.55mm
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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