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SST25WF040

Status: End of Life

Features:

  • Single Voltage Read and Write Operations– 1.65-1.95V
  • Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
  • High Speed Clock Frequency– 40MHz
  • Superior Reliability– Endurance: 100,000 Cycles– Greater than 100 years Data Retention
  • Ultra-Low Power Consumption:– Active Read Current: 2 mA (typical @ 20MHz)– Standby Current: 2 µA (typical)
  • Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks– Uniform 64 KByte overlay blocks
  • Fast Erase and Byte-Program:– Chip-Erase Time: 125 ms (typical)– Sector-/Block-Erase Time: 62ms (typical)– Byte-Program Time: 50 µS (typical)
  • Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations
  • End-of-Write Detection– Software polling the BUSY bit in Status Register– Busy Status readout on SO pin
  • Reset Pin (RST#) or Programmable Hold Pin(HOLD#) option– Hardware Reset pin as default– Hold pin option to suspend a serial sequencewithout deselecting the device
  • Write Protection (WP#)– Enables/Disables the Lock-Down function of thestatus register
  • Software Write Protection– Write protection through Block-Protection bits instatus register
  • Temperature Range– Industrial: -40°C to +85°C
  • Packages Available– 8-lead SOIC (150 mils)– 8-contact WSON (5mm x 6mm)
  • All non-Pb (lead-free) devices are RoHS compliant
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Device Overview

Summary

SST25WF040 SPI serial flash memory is manufactured with SST proprietary, highperformance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

The End of Life notification of the SST25WF040 is available on-line EOL NOTIFICATION

Please consider this device SST25WF040B

Additional Features
    • Single Voltage Read and Write Operations– 1.65-1.95V
    • Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
    • High Speed Clock Frequency– 40MHz
    • Superior Reliability– Endurance: 100,000 Cycles– Greater than 100 years Data Retention
    • Ultra-Low Power Consumption:– Active Read Current: 2 mA (typical @ 20MHz)– Standby Current: 2 µA (typical)
    • Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks– Uniform 64 KByte overlay blocks
    • Fast Erase and Byte-Program:– Chip-Erase Time: 125 ms (typical)– Sector-/Block-Erase Time: 62ms (typical)– Byte-Program Time: 50 µS (typical)
    • Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations
    • End-of-Write Detection– Software polling the BUSY bit in Status Register– Busy Status readout on SO pin
    • Reset Pin (RST#) or Programmable Hold Pin(HOLD#) option– Hardware Reset pin as default– Hold pin option to suspend a serial sequencewithout deselecting the device
    • Write Protection (WP#)– Enables/Disables the Lock-Down function of thestatus register
    • Software Write Protection– Write protection through Block-Protection bits instatus register
    • Temperature Range– Industrial: -40°C to +85°C
    • Packages Available– 8-lead SOIC (150 mils)– 8-contact WSON (5mm x 6mm)
    • All non-Pb (lead-free) devices are RoHS compliant
Parametrics
Name
Value
Density
4 Mbit
Op. Volt Range (V)
1.65 to 1.95
Max. Clock Freq.
40 MHz
Temp Range (°C)
-40°C to +85°C
Endurance
100,000

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