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SST25VF020B

2Mb 2.7-3.6V SPI Serial Flash

Status: In Production

Features:

  • Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
  • Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
  • Low Power Consumption:– Active Read Current: 10 mA (typical)– Standby Current: 5 µA (typical)
  • Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks– Uniform 64 KByte overlay blocks
  • Fast Erase and Byte-Program:– Chip-Erase Time: 35 ms (typical)– Sector-/Block-Erase Time: 18 ms (typical)– Byte-Program Time: 7 µs (typical)
  • Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations
  • Packages Available– 8-lead SOIC (150 mils)– 8-contact WSON (6mm x 5mm) -- 8-contact TDFN (2mm x 3mm)
  • All non-Pb (lead-free) devices are RoHS compliant
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Overview
Documents
Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

The 25 series Serial Flash family features a four-wire, SPIcompatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF020B devices are enhanced with improved operating frequency and even lower power consumption. SST25VF020B SPI serial flash memories are manufactured with SST proprietary, highperformance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Additional Features
    • Serial Interface Architecture– SPI Compatible: Mode 0 and Mode 3
    • Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
    • Low Power Consumption:– Active Read Current: 10 mA (typical)– Standby Current: 5 µA (typical)
    • Flexible Erase Capability– Uniform 4 KByte sectors– Uniform 32 KByte overlay blocks– Uniform 64 KByte overlay blocks
    • Fast Erase and Byte-Program:– Chip-Erase Time: 35 ms (typical)– Sector-/Block-Erase Time: 18 ms (typical)– Byte-Program Time: 7 µs (typical)
    • Auto Address Increment (AAI) Programming– Decrease total chip programming time overByte-Program operations
    • Packages Available– 8-lead SOIC (150 mils)– 8-contact WSON (6mm x 5mm)      -  8-contact TDFN (2mm x 3mm)
    • All non-Pb (lead-free) devices are RoHS compliant
Parametrics
Name
Value
Density
2 Mbit
Op. Volt Range (V)
2.7 to 3.6
Max. Clock Freq.
80 MHz
Temp Range (°C)
-40°C to +85°C
Endurance
100,000
Data Retention (Years)
100
Bus Modes
SPI

Documents

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Development Environment

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
SST25VF020B-80-4I-Q3AE-T
0.016900
0.031333
8
USON
2x3x0.6mm
Matte Tin
e3
SST25VF020B-80-4C-Q3AE-T
0.016900
0.031333
8
USON
2x3x0.6mm
Matte Tin
e3
SST25VF020B-80-4C-SAE
0.078000
0.250000
8
SOIC
.1China RoHs 50.pngIn(3.90mm)
Matte Tin
e3
SST25VF020B-80-4C-SAE-T
0.078000
0.230303
8
SOIC
.1China RoHs 50.pngIn(3.90mm)
Matte Tin
e3
SST25VF020B-80-4I-SAE
0.078000
0.250000
8
SOIC
.1China RoHs 50.pngIn(3.90mm)
Matte Tin
e3
SST25VF020B-80-4I-SAE-T
0.078000
0.230303
8
SOIC
.1China RoHs 50.pngIn(3.90mm)
Matte Tin
e3
SST25VF020B-80-4I-SAE-TRI
0.078000
0.250000
8
SOIC
.1China RoHs 50.pngIn(3.90mm)
Matte Tin
e3
SST25VF020B-80-4C-QAE
0.073800
0.163265
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
SST25VF020B-80-4C-QAE-T
0.073800
0.200000
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
SST25VF020B-80-4I-QAE
0.073800
0.163265
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
SST25VF020B-80-4I-QAE-T
0.073800
0.200000
8
TDFN-S
6x5x0.8mm
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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