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MCP87030

Status: End of Life

Features:

  • Low Drain-to-Source On Resistance (RDS(ON))
  • Low Total Gate Charge (QG) and Gate-to-DrainCharge (QGD)
  • Low Series Gate Resistance (RG)
  • Fast Switching
  • Capable of Short Dead-Time Operation
  • ROHS Compliant
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Overview
Documents
Development Environment
RoHS Information
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Device Overview

Summary

The MCP87030 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced packaging and silicon processing technologies allow the MCP87030 to achieve a low QG for a given RDS(on) value, resulting in a low Figure of Merit (FOM). Combined with low RG, the low FOM of the MCP87030 allows high efficiency power conversion with reduced switching and conduction losses.

Additional Features
    • Low Drain-to-Source On Resistance (RDS(ON))
    • Low Total Gate Charge (QG) and Gate-to-DrainCharge (QGD)
    • Low Series Gate Resistance (RG)
    • Fast Switching
    • Capable of Short Dead-Time Operation
    • ROHS Compliant
Parametrics
Name
Value
Vds (V)
25
Configuration
Single
Polarity
N
Rds(on) @ 4.5V (mΩ, Max)
4.0
Rds(on) @ 10V (mΩ, Max)
3.5
Qg @ 4.5V (nC, Max)
22.0
Id (A, Max @ 25C,Tcase)
100.0
Vgs(th) (V, Min)
1.0
Package Size
5x6mm

Documents

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Data Sheets

  
661KB

Software Libraries/Firmware


Development tools data is currently unavailable.

RoHS Information

Part Number
Device Weight (g)
Shipping Weight (Kg)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
MCP87030T-U/MF
0.104720
0.218182
8
PDFN
5x6x0.9mm
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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