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LND150

N-Channel Depletion-Mode DMOS FET

Status: In Production

Features:

  • Free from secondary breakdown
  • Low power drive requirement
  • Ease of paralleling
  • Excellent thermal stability
  • Integral source-drain diode
  • High input impedance and low CISS
  • ESD gate protection
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Overview
Documents
Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.

Additional Features
    • Free from secondary breakdown
    • Low power drive requirement
    • Ease of paralleling
    • Excellent thermal stability
    • Integral source-drain diode
    • High input impedance and low CISS
    • ESD gate protection
Parametrics
Name
Value
BVdsx min (V)
500
RDS
1000
Vgs(off) min (V)
-1.0
Vgs(off) max (V)
-3.0
Package
SOT-23, TO-92, SOT-89

Documents

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (grams)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
LND150N8-G
0.051800
0.132000
3
SOT-89
-
Matte Tin
e3
LND150K1-G
0.008300
0.039000
3
SOT-23
1.3mm
Matte Tin
e3
LND150N3-G
0.203400
0.219000
3
TO-92
-
Matte Tin
e3
LND150N3-G-P002
0.203400
0.515000
3
TO-92
-
Matte Tin
e3
LND150N3-G-P003
0.203400
0.515000
3
TO-92
-
Matte Tin
e3
LND150N3-G-P013
0.203400
0.350000
3
TO-92
-
Matte Tin
e3
LND150N3-G-P014
0.203400
0.350000
3
TO-92
-
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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