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DN3765

650V, 8 Ohm, N-Channel, Depletion Mode, Vertical DMOS FET

Status: In Production

Features:

  • High input impedance
  • Low input capacitance
  • Fast switching speeds
  • Low on-resistance
  • Free from secondary breakdown
  • Low input and output leakage
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Overview
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Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Additional Features
    • High input impedance
    • Low input capacitance
    • Fast switching speeds
    • Low on-resistance
    • Free from secondary breakdown
    • Low input and output leakage
Parametrics
Name
Value
BVdsx min (V)
650
RDS
8
Vgs(off) min (V)
-1.5
Vgs(off) max (V)
-3.5
Package
TO-252

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (grams)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
DN3765K4-G
1.420000
0.501000
3
DPAK
-
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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