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AT28LV010

Low-Voltage 1Mbit (128Kbit x 8) Parallel EEPROM

Status: In Production

Overview
Documents
Development Environment
Similar Devices
RoHS Information
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Device Overview

Summary

High-performance 1M EEPROM offers access times to 200ns with 54mW power dissipation and 3.0V supply voltage. Deselected, CMOS standby current is less than 20µA . It is accessed like static RAM for the read or write cycle without external components, it contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 128 bytes of EEPROM enables device identification or tracking.

Parametrics
Name
Value
Density
1Mb
Op. Volt Range (V)
3 to 3.6
Read Access Time
200/250ns

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Data Sheets

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Development tools data is currently unavailable.

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RoHS Information

Part Number
Device Weight (g)
Shipping Weight (grams)
Lead Count
Package Type
Package Width
Solder Composition
JEDEC Indicator
RoHS
China EFUP
AT28LV010-20JU-235
1.129000
1.896000
32
PLCC
11.5x14x3.37mm
Matte Tin
e3
AT28LV010-20JU-T
1.129000
1.896000
32
PLCC
11.5x14x3.37mm
Matte Tin
e3
AT28LV010-20JU-630
1.129000
1.896000
32
PLCC
11.5x14x3.37mm
Matte Tin
e3
AT28LV010-20JU
1.129000
2.333333
32
PLCC
11.5x14x3.37mm
Matte Tin
e3
AT28LV010-20JU-319
1.129000
2.333333
32
PLCC
11.5x14x3.37mm
Matte Tin
e3
AT28LV010-20TU-630
0.372900
0.372667
32
TSOP
8x18.4x1mm
Matte Tin
e3
AT28LV010-20TU-319
0.372900
2.570513
32
TSOP
8x18.4x1mm
Matte Tin
e3
AT28LV010-20TU-235
0.372900
0.372667
32
TSOP
8x18.4x1mm
Matte Tin
e3
AT28LV010-20TU
0.372900
2.570513
32
TSOP
8x18.4x1mm
Matte Tin
e3
AT28LV010-20TU-T
0.372900
0.372667
32
TSOP
8x18.4x1mm
Matte Tin
e3
To see a complete listing of RoHS data for this device, please Click here
Shipping Weight = Device Weight + Packing Material weight. Please contact sales office if device weight is not available.

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